Millisecond radiative recombination in poly(phenylene vinylene)-based light-emitting diodes from transient electroluminescence
The current and electroluminescence transient responses of standard poly phenylene vinylene -based light-emitting devices have been investigated. The electroluminescence time response is longer milliseconds scale than the current switch-off time by more than one order of magnitude, in the case of sm...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2007 |
| País: | España |
| Institución: | Universidad de Sevilla (US) |
| Repositorio: | idUS. Depósito de Investigación de la Universidad de Sevilla |
| OAI Identifier: | oai:idus.us.es:11441/126836 |
| Acceso en línea: | https://hdl.handle.net/11441/126836 https://doi.org/10.1063/1.2743741 |
| Access Level: | acceso abierto |
| Palabra clave: | Bias voltage Carrier transport Electroluminescence Light emitting diodes |
| Sumario: | The current and electroluminescence transient responses of standard poly phenylene vinylene -based light-emitting devices have been investigated. The electroluminescence time response is longer milliseconds scale than the current switch-off time by more than one order of magnitude, in the case of small area devices 0.1 cm2 . For large area devices 6 cm2 the electroluminescence decay time decreases from 1.45 ms to 100 s with increasing bias voltage. The fast current decay limits the electroluminescence decay at higher voltages. Several approaches are discussed to interpret the observed slow decrease of electroluminescence after turning off the bias. One relies upon the Langevin-type bimolecular recombination kinetics which is governed by the minority carriers electrons , and another focuses on the slow release of trapped electrons as possible explanations. Additionally, we show that the device current density is mainly determined by the transport of the fastest carriers (holes). |
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