Reliably straining suspended van der Waals heterostructures
2D materials provide a rapidly expanding platform for the observation of novel physical phenomena and for the realization of cuttingedge optoelectronic devices. In addition to their peculiar individual characteristics, 2D materials can be stacked into complex van der Waals heterostructures, greatly...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2023 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:292602 |
| Acceso en línea: | https://ddd.uab.cat/record/292602 https://dx.doi.org/urn:doi:10.1063/5.0166460 |
| Access Level: | acceso abierto |
| Palabra clave: | First-principle calculations Heterostructures Strain measurement Graphene 2D materials Raman spectroscopy |
| Sumario: | 2D materials provide a rapidly expanding platform for the observation of novel physical phenomena and for the realization of cuttingedge optoelectronic devices. In addition to their peculiar individual characteristics, 2D materials can be stacked into complex van der Waals heterostructures, greatly expanding their potential. Moreover, thanks to their excellent stretchability, strain can be used as a powerful control knob to tune or boost many of their properties. Here, we present a novel method to reliably and repeatedly apply a high uniaxial tensile strain to suspended van der Waals heterostructures. The reported device is engineered starting from a silicon-on-insulator substrate, allowing for the realization of suspended silicon beams that can amplify the applied strain. The strain module functionality is demonstrated using singleand double-layer graphene layers stacked with a multilayered hexagonal boron nitride flake. The heterostructures can be uniaxially strained, respectively, up to ∼1.2% and ∼1.8%. |
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