Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces

Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS het...

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Autores: Liu, Yu|||0000-0001-7313-6740, Luchini, Alessandra|||0000-0003-2380-6069, Martí-Sánchez, Sara|||0000-0003-4283-1489, Koch, Christian, Schuwalow, Sergej, Khan, Sabbir A.|||0000-0003-1279-7638, Stankevič, Tomas, Francoual, Sonia, Mardegan, Jose R. L., Krieger, Jonas A., Strocov, Vladimir N., Stahn, Jochen, Vaz, Carlos A. F.|||0000-0002-6209-8918, Ramakrishnan, Mahesh, Staub, Urs, Lefmann, Kim, Aeppli, Gabriel, Arbiol i Cobos, Jordi|||0000-0002-0695-1726, Krogstrup, Peter|||0000-0002-1930-8553
Formato: artículo
Fecha de publicación:2020
País:España
Recursos:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:236028
Acesso em linha:https://ddd.uab.cat/record/236028
https://dx.doi.org/urn:doi:10.1021/acsami.9b15034
Access Level:acceso abierto
Palavra-chave:Quantum computing
Proximity effects
MBE
Hybrid materials
Magnetic proximity
Exchange field
Band alignment
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spelling Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfacesband alignment and magnetic structureLiu, Yu|||0000-0001-7313-6740Luchini, Alessandra|||0000-0003-2380-6069Martí-Sánchez, Sara|||0000-0003-4283-1489Koch, ChristianSchuwalow, SergejKhan, Sabbir A.|||0000-0003-1279-7638Stankevič, TomasFrancoual, SoniaMardegan, Jose R. L.Krieger, Jonas A.Strocov, Vladimir N.Stahn, JochenVaz, Carlos A. F.|||0000-0002-6209-8918Ramakrishnan, MaheshStaub, UrsLefmann, KimAeppli, GabrielArbiol i Cobos, Jordi|||0000-0002-0695-1726Krogstrup, Peter|||0000-0002-1930-8553Quantum computingProximity effectsMBEHybrid materialsMagnetic proximityExchange fieldBand alignmentHybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the overall ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs and magnetic moments outside the detection limits on the pure InAs side. This work presents a step toward realizing defect-free semiconductor-ferromagnetic insulator epitaxial hybrids for spin-lifted quantum and spintronic applications without external magnetic fields. 22020-01-0120202020-01-01Articlehttp://purl.org/coar/resource_type/c_6501SMURhttp://purl.org/coar/version/c_71e4c1898caa6e32info:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/236028https://dx.doi.org/urn:doi:10.1021/acsami.9b15034reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengEuropean Commission https://doi.org/10.13039/501100000780 716655European Commission https://doi.org/10.13039/501100000780 722176Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2017-0706Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2017/SGR-327open accesshttp://purl.org/coar/access_right/c_abf2Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.https://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2360282026-06-06T12:50:31Z
dc.title.none.fl_str_mv Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces
band alignment and magnetic structure
title Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces
spellingShingle Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces
Liu, Yu|||0000-0001-7313-6740
Quantum computing
Proximity effects
MBE
Hybrid materials
Magnetic proximity
Exchange field
Band alignment
title_short Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces
title_full Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces
title_fullStr Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces
title_full_unstemmed Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces
title_sort Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces
dc.creator.none.fl_str_mv Liu, Yu|||0000-0001-7313-6740
Luchini, Alessandra|||0000-0003-2380-6069
Martí-Sánchez, Sara|||0000-0003-4283-1489
Koch, Christian
Schuwalow, Sergej
Khan, Sabbir A.|||0000-0003-1279-7638
Stankevič, Tomas
Francoual, Sonia
Mardegan, Jose R. L.
Krieger, Jonas A.
Strocov, Vladimir N.
Stahn, Jochen
Vaz, Carlos A. F.|||0000-0002-6209-8918
Ramakrishnan, Mahesh
Staub, Urs
Lefmann, Kim
Aeppli, Gabriel
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Krogstrup, Peter|||0000-0002-1930-8553
author Liu, Yu|||0000-0001-7313-6740
author_facet Liu, Yu|||0000-0001-7313-6740
Luchini, Alessandra|||0000-0003-2380-6069
Martí-Sánchez, Sara|||0000-0003-4283-1489
Koch, Christian
Schuwalow, Sergej
Khan, Sabbir A.|||0000-0003-1279-7638
Stankevič, Tomas
Francoual, Sonia
Mardegan, Jose R. L.
Krieger, Jonas A.
Strocov, Vladimir N.
Stahn, Jochen
Vaz, Carlos A. F.|||0000-0002-6209-8918
Ramakrishnan, Mahesh
Staub, Urs
Lefmann, Kim
Aeppli, Gabriel
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Krogstrup, Peter|||0000-0002-1930-8553
author_role author
author2 Luchini, Alessandra|||0000-0003-2380-6069
Martí-Sánchez, Sara|||0000-0003-4283-1489
Koch, Christian
Schuwalow, Sergej
Khan, Sabbir A.|||0000-0003-1279-7638
Stankevič, Tomas
Francoual, Sonia
Mardegan, Jose R. L.
Krieger, Jonas A.
Strocov, Vladimir N.
Stahn, Jochen
Vaz, Carlos A. F.|||0000-0002-6209-8918
Ramakrishnan, Mahesh
Staub, Urs
Lefmann, Kim
Aeppli, Gabriel
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Krogstrup, Peter|||0000-0002-1930-8553
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Quantum computing
Proximity effects
MBE
Hybrid materials
Magnetic proximity
Exchange field
Band alignment
topic Quantum computing
Proximity effects
MBE
Hybrid materials
Magnetic proximity
Exchange field
Band alignment
description Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the overall ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs and magnetic moments outside the detection limits on the pure InAs side. This work presents a step toward realizing defect-free semiconductor-ferromagnetic insulator epitaxial hybrids for spin-lifted quantum and spintronic applications without external magnetic fields.
publishDate 2020
dc.date.none.fl_str_mv 2
2020-01-01
2020
2020-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
SMUR
http://purl.org/coar/version/c_71e4c1898caa6e32
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/236028
https://dx.doi.org/urn:doi:10.1021/acsami.9b15034
url https://ddd.uab.cat/record/236028
https://dx.doi.org/urn:doi:10.1021/acsami.9b15034
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv European Commission https://doi.org/10.13039/501100000780 716655
European Commission https://doi.org/10.13039/501100000780 722176
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2017-0706
Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2017/SGR-327
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300724

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