Structural and optical characterization of GaNAs layers grown by molecular beam epitaxy
We have grown GaNxAs1−x layers by molecular beam epitaxy on GaAs 100 substrates using a radio frequency plasma nitrogen source and solid sources for Ga and As. Employing reflection high-energy electron diffraction RHEED , the GaNAs growth mode was in situ monitored. A three dimensional 3D growth mod...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2006 |
| País: | México |
| Institución: | Instituto Politécnico Nacional |
| Repositorio: | Repositorio Digital del IPN |
| OAI Identifier: | oai:www.repositoriodigital.ipn.mx:123456789/11462 |
| Acceso en línea: | http://hdl.handle.net/123456789/1011 http://www.repositoriodigital.ipn.mx/handle/123456789/11462 |
| Access Level: | acceso abierto |
| Palabra clave: | MBE GaNAs LAYERS |
| Sumario: | We have grown GaNxAs1−x layers by molecular beam epitaxy on GaAs 100 substrates using a radio frequency plasma nitrogen source and solid sources for Ga and As. Employing reflection high-energy electron diffraction RHEED , the GaNAs growth mode was in situ monitored. A three dimensional 3D growth mode was obtained at the low growth temperature of 420 °C. At higher temperatures streaky RHEED patterns were observed during all the GaNAs deposition, indicating a two dimensional 2D growth mode. The structural and optical properties of the GaNAs layers were studied by employing high-resolution x-ray diffraction, atomic force microscopy, Raman scattering, and spectroscopic ellipsometry. The films grown in a 3D mode presented high density of crystal defects, degraded structural properties, and broad optical transitions. In contrast, GaNAs layers grown in a 2D mode are pseudomorphic with high crystal quality. The properties of samples with a high N concentration were improved by first growing a GaNAs layer with a low N content. |
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