Unleashing the Impact of Topological Surface States on the Thermoelectric Properties of Granular Sb2Te3 Thin Films Deposited on Flexible Substrates

Between thermoelectric materials, topological insulators (TIs) such as Sb2Te3 can effectively decouple phonon and electronic transport. Recent works mostly focused on TI composites or superlattices, where the contribution of the topological surface states (TSS) to the thermoelectric properties is ov...

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Autores: Locatelli, Lorenzo, Rossi, Pietro, Kumar, Arun, Wiemer, Claudia, Lamperti, Alessio, Mantovan, Roberto, Raciti, Grazia, Xu, Kai, Reparaz, J. Sebastian, Caironi, Mario, Pace, Giuseppina
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2025
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/396346
Acceso en línea:http://hdl.handle.net/10261/396346
https://api.elsevier.com/content/abstract/scopus_id/105007928286
Access Level:acceso abierto
Palabra clave:MOCVD
Sb2Te3
Topological insulators
Flexible thermoelectrics
Thin film
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spelling Unleashing the Impact of Topological Surface States on the Thermoelectric Properties of Granular Sb2Te3 Thin Films Deposited on Flexible SubstratesLocatelli, LorenzoRossi, PietroKumar, ArunWiemer, ClaudiaLamperti, AlessioMantovan, RobertoRaciti, GraziaXu, KaiReparaz, J. SebastianCaironi, MarioPace, GiuseppinaMOCVDSb2Te3Topological insulatorsFlexible thermoelectricsThin filmBetween thermoelectric materials, topological insulators (TIs) such as Sb2Te3 can effectively decouple phonon and electronic transport. Recent works mostly focused on TI composites or superlattices, where the contribution of the topological surface states (TSS) to the thermoelectric properties is overshadowed by other mechanisms such as energy filtering or electronic band reorganization. Here, we investigate efficient thermoelectric Sb2Te3 polycrystalline thin films deposited on plastic foil. Magneto-transport studies show that the presence of TSS in more granular films is responsible for the 2-orders of magnitude higher electronic conductivity compared to thick films owing to larger crystalline domains (> 100 nm). The prevalence of the bulk states in thick films reduces both their thermal and electronic conductivity; however, they are responsible for an increase in the Seebeck coefficient. Overall, we show that to achieve higher thermoelectric performance of single-component TI films, it is necessary to tune the relative contribution of topological and bulk states. This will potentially allow for the development of cost-effective thermoelectric generators, reducing the complexity of competitive systems based on multicomponent heterostructures.Financial support is acknowledged from the Spanish Ministerio de Ciencia e Innovación (MICINN) for its support through Grant CEX2023–001263-S in the framework of the Spanish Severo Ochoa Centre of Excellence program and Grants PID2020–119777GB-I00 (THERM2MAIN) and PDC2021–121814-I00 (COVEQ). G. Raciti acknowledges financial support from Eucor, The European Campus (Marie Sklodowska-Curie QUSTEC grant agreement no. 847471) and the Swiss National Science Foundation (Project Grant no. CRSII5 189924).With funding from the Spanish government through the ‘Severo Ochoa Centre of Excellence’ accreditation (CEX2023-001263-S).Peer reviewedAmerican Chemical SocietyMinisterio de Ciencia, Innovación y Universidades (España)Ministerio de Ciencia e Innovación (España)Agencia Estatal de Investigación (España)European CommissionSwiss National Science FoundationKumar, Arun [0000-0002-6333-2198]Mantovan, Roberto [0000-0002-9353-4137]Xu, Kai [0000-0001-6999-1904]Caironi, Mario [0000-0002-0442-4439]Pace, Giuseppina [0000-0003-1699-1825]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202520252025info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/396346https://api.elsevier.com/content/abstract/scopus_id/105007928286reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/AEI/Plan Estatal de investigación Científica y Técnica y de Innovación 2021-2023/CEX2023-001263-Sinfo:eu-repo/grantAgreement/MICIU/Plan Estatal de investigación Científica y Técnica y de Innovación 2017-2020/PID2020–119777GB-I00info:eu-repo/grantAgreement/MICINN/Plan Estatal de investigación Científica y Técnica y de Innovación 2021-2023/PDC2021–121814-I00info:eu-repo/grantAgreement/EC/H2020/847471ACS applied materials & interfaceshttp://doi.org/10.1021/acsami.5c03871Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3963462026-05-22T06:33:51Z
dc.title.none.fl_str_mv Unleashing the Impact of Topological Surface States on the Thermoelectric Properties of Granular Sb2Te3 Thin Films Deposited on Flexible Substrates
title Unleashing the Impact of Topological Surface States on the Thermoelectric Properties of Granular Sb2Te3 Thin Films Deposited on Flexible Substrates
spellingShingle Unleashing the Impact of Topological Surface States on the Thermoelectric Properties of Granular Sb2Te3 Thin Films Deposited on Flexible Substrates
Locatelli, Lorenzo
MOCVD
Sb2Te3
Topological insulators
Flexible thermoelectrics
Thin film
title_short Unleashing the Impact of Topological Surface States on the Thermoelectric Properties of Granular Sb2Te3 Thin Films Deposited on Flexible Substrates
title_full Unleashing the Impact of Topological Surface States on the Thermoelectric Properties of Granular Sb2Te3 Thin Films Deposited on Flexible Substrates
title_fullStr Unleashing the Impact of Topological Surface States on the Thermoelectric Properties of Granular Sb2Te3 Thin Films Deposited on Flexible Substrates
title_full_unstemmed Unleashing the Impact of Topological Surface States on the Thermoelectric Properties of Granular Sb2Te3 Thin Films Deposited on Flexible Substrates
title_sort Unleashing the Impact of Topological Surface States on the Thermoelectric Properties of Granular Sb2Te3 Thin Films Deposited on Flexible Substrates
dc.creator.none.fl_str_mv Locatelli, Lorenzo
Rossi, Pietro
Kumar, Arun
Wiemer, Claudia
Lamperti, Alessio
Mantovan, Roberto
Raciti, Grazia
Xu, Kai
Reparaz, J. Sebastian
Caironi, Mario
Pace, Giuseppina
author Locatelli, Lorenzo
author_facet Locatelli, Lorenzo
Rossi, Pietro
Kumar, Arun
Wiemer, Claudia
Lamperti, Alessio
Mantovan, Roberto
Raciti, Grazia
Xu, Kai
Reparaz, J. Sebastian
Caironi, Mario
Pace, Giuseppina
author_role author
author2 Rossi, Pietro
Kumar, Arun
Wiemer, Claudia
Lamperti, Alessio
Mantovan, Roberto
Raciti, Grazia
Xu, Kai
Reparaz, J. Sebastian
Caironi, Mario
Pace, Giuseppina
author2_role author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Ministerio de Ciencia, Innovación y Universidades (España)
Ministerio de Ciencia e Innovación (España)
Agencia Estatal de Investigación (España)
European Commission
Swiss National Science Foundation
Kumar, Arun [0000-0002-6333-2198]
Mantovan, Roberto [0000-0002-9353-4137]
Xu, Kai [0000-0001-6999-1904]
Caironi, Mario [0000-0002-0442-4439]
Pace, Giuseppina [0000-0003-1699-1825]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv MOCVD
Sb2Te3
Topological insulators
Flexible thermoelectrics
Thin film
topic MOCVD
Sb2Te3
Topological insulators
Flexible thermoelectrics
Thin film
description Between thermoelectric materials, topological insulators (TIs) such as Sb2Te3 can effectively decouple phonon and electronic transport. Recent works mostly focused on TI composites or superlattices, where the contribution of the topological surface states (TSS) to the thermoelectric properties is overshadowed by other mechanisms such as energy filtering or electronic band reorganization. Here, we investigate efficient thermoelectric Sb2Te3 polycrystalline thin films deposited on plastic foil. Magneto-transport studies show that the presence of TSS in more granular films is responsible for the 2-orders of magnitude higher electronic conductivity compared to thick films owing to larger crystalline domains (> 100 nm). The prevalence of the bulk states in thick films reduces both their thermal and electronic conductivity; however, they are responsible for an increase in the Seebeck coefficient. Overall, we show that to achieve higher thermoelectric performance of single-component TI films, it is necessary to tune the relative contribution of topological and bulk states. This will potentially allow for the development of cost-effective thermoelectric generators, reducing the complexity of competitive systems based on multicomponent heterostructures.
publishDate 2025
dc.date.none.fl_str_mv 2025
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/396346
https://api.elsevier.com/content/abstract/scopus_id/105007928286
url http://hdl.handle.net/10261/396346
https://api.elsevier.com/content/abstract/scopus_id/105007928286
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
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info:eu-repo/grantAgreement/AEI/Plan Estatal de investigación Científica y Técnica y de Innovación 2021-2023/CEX2023-001263-S
info:eu-repo/grantAgreement/MICIU/Plan Estatal de investigación Científica y Técnica y de Innovación 2017-2020/PID2020–119777GB-I00
info:eu-repo/grantAgreement/MICINN/Plan Estatal de investigación Científica y Técnica y de Innovación 2021-2023/PDC2021–121814-I00
info:eu-repo/grantAgreement/EC/H2020/847471
ACS applied materials & interfaces
http://doi.org/10.1021/acsami.5c03871

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eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Chemical Society
publisher.none.fl_str_mv American Chemical Society
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
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