Highly Efficient Current-Induced Torques Originating from Topological Surface States in Sb2Te3
Topological insulators (TIs) have shown great promise for the development of energy-efficient and ultra-fast spintronic devices leveraging charge-spin interconversion (CSIC) mechanisms. Among them, chalcogenide-based TIs stand out for their compatibility with wafer-scale growth techniques. Recent st...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/424497 |
| Acceso en línea: | http://hdl.handle.net/10261/424497 https://api.elsevier.com/content/abstract/scopus_id/105015366101 |
| Access Level: | acceso abierto |
| Palabra clave: | Charge-to-spin conversion Harmonic magnetoresistance MOCVD SMR Spin orbit torque Spintronics Topological insulator USMR |
| Sumario: | Topological insulators (TIs) have shown great promise for the development of energy-efficient and ultra-fast spintronic devices leveraging charge-spin interconversion (CSIC) mechanisms. Among them, chalcogenide-based TIs stand out for their compatibility with wafer-scale growth techniques. Recent studies have validated the topological properties of Sb<inf>2</inf>Te<inf>3</inf> thin films grown via metal–organic chemical vapor deposition on 4-inch wafers. To advance Sb<inf>2</inf>Te<inf>3</inf>-based devices toward practical applications, CSIC efficiency must be evaluated under charge current injection in miniaturized electronic devices. The present study investigates spin-orbit torque (SOT) and magnetoresistive responses in Sb<inf>2</inf>Te<inf>3</inf>/Au/Co/Au. Measurements reveal the high SOT efficiency acting on Co and originating from Sb<inf>2</inf>Te<inf>3</inf>, equivalent to a spin Hall angle up to 62.8 ± 3.2, and a spin Hall conductivity up to 3.6 ± 0.2 × 10<sup>6</sup> (Formula presented.). These findings underscore the potential of the Sb<inf>2</inf>Te<inf>3</inf> TI as a leading candidate for efficient spintronic devices, providing a solid foundation for its integration into novel functional devices. |
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