Wafer-Scale Synthesis of Topological Insulator Sb2Te3 Thin Films
Recently, metal-organic chemical vapor deposition (MOCVD) has been proven successful to grow topological insulators such as antimony telluride (Sb<inf>2</inf>Te<inf>3</inf>), with their use as efficient spin-charge converters at room temperature also being reported. On the ot...
| Autores: | , , , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/392456 |
| Acceso en línea: | http://hdl.handle.net/10261/392456 https://api.elsevier.com/content/abstract/scopus_id/85216801301 |
| Access Level: | acceso abierto |
| Palabra clave: | Chalcogenides Magnetotransport MOCVD Spintronics Topological insulators Weak antilocalization |
| Sumario: | Recently, metal-organic chemical vapor deposition (MOCVD) has been proven successful to grow topological insulators such as antimony telluride (Sb<inf>2</inf>Te<inf>3</inf>), with their use as efficient spin-charge converters at room temperature also being reported. On the other hand, a wafer-scale synthesis of Sb<inf>2</inf>Te<inf>3</inf> thin films showing clear-cut electrical conduction driven by topologically protected surface states is still missing. Within this work, the growth of Sb<inf>2</inf>Te<inf>3</inf> thin films with variable thicknesses over 4-inch (4″) wafer-scale Si(111) substrates as conducted via MOCVD is reported. By performing magnetoconductance measurements, weak antilocalization phenomena are detected over the whole 4″ area, thus proving the possibility to produce wafer-scale Sb<inf>2</inf>Te<inf>3</inf> topological insulator thin films. Furthermore, comprehensive information on the variability of the functional properties of Sb<inf>2</inf>Te<inf>3</inf> thin films with their morphological, chemical, and structural properties, as probed by scanning electron microscopy, X-ray diffraction/reflectivity, atomic force microscopy, Raman spectroscopy, time-of-flight secondary ion mass spectrometry, and energy-dispersive X-ray analyses is reported. This work provides a breakthrough for the technology scale-up of these novel materials to be employed in future spintronic devices as well as applications in nanoelectronics, thermoelectrics, and quantum computing. |
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