Data for main text figures - In situ engineering hexagonal boron nitride in van der Waals heterostructures with selective SF6 etching

Data includes AFM, Raman, and Transport measurements of graphene heterostructures before and after etching with SF6.

Detalles Bibliográficos
Autores: Agarwal, Hitesh, Reserbat-Plantey, Antoine, Barcons Ruiz, David, Soundarapandian, Karuppasamy, Li, Geng, Mkhitaryan, Vahagn, Osmond, Johann, Lozano, Helena, Watanabe, Kenji, Taniguchi, Takashi, Stepanov, Petr, Koppens, Frank H. L., Krishna Kumar, Roshan
Tipo de recurso: conjunto de datos
Fecha de publicación:2025
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/405948
Acceso en línea:http://hdl.handle.net/10261/405948
Access Level:acceso abierto
Palabra clave:Graphene
SF6 etching
hBN etching
Van der Waals heterostructure
2D material
id ES_d2f1aa6f26b68f0e90c8f69ea718ba42
oai_identifier_str oai:digital.csic.es:10261/405948
network_acronym_str ES
network_name_str España
repository_id_str
spelling Data for main text figures - In situ engineering hexagonal boron nitride in van der Waals heterostructures with selective SF6 etchingAgarwal, HiteshReserbat-Plantey, AntoineBarcons Ruiz, DavidSoundarapandian, KaruppasamyLi, GengMkhitaryan, VahagnOsmond, JohannLozano, HelenaWatanabe, KenjiTaniguchi, TakashiStepanov, PetrKoppens, Frank H. L.Krishna Kumar, RoshanGrapheneSF6 etchinghBN etchingVan der Waals heterostructure2D materialData includes AFM, Raman, and Transport measurements of graphene heterostructures before and after etching with SF6.Van der Waals heterostructures are at the forefront in materials heterostructure engineering, offering the ultimate control in layer selectivity and capability to combine virtually any material. Hexagonal-boron nitride, the most commonly used dielectric material, has proven indispensable in this field, allowing the encapsulation of active 2D materials preserving their exceptional electronic quality. However, not all device applications require full encapsulation but rather require open surfaces, or even selective patterning of hBN layers. Here, we report on a procedure to engineer top hBN layers within van der Waals heterostructures while preserving the underlying active 2D layers. Using a soft selective SF6 etching combined with a series of pre and post-etching treatments, we demonstrate that pristine surfaces can be exposed with atomic flatness while preserving the active layers’ electronic quality. We benchmark our technique using graphene/hBN Hall bar devices. Using Raman spectroscopy combined with quantum transport, we show high quality can be preserved in etched regions by demonstrating low temperature carrier mobilities > 200,000 cm2/Vs, ballistic transport probed through magnetic focusing, and intrinsic room temperature phonon-limited mobilities. Atomic force microscopy brooming and O2 plasma cleaning are identified as key pre-etching steps to obtaining pristine open surfaces while preserving electronic quality. The technique provides a clean method for opening windows into mesoscopic van der Waals devices that can be used for local probe experiments, patterning top hBN in-situ, and exposing 2D layers to their environment for sensing applications.Peer reviewedZenodoAgarwal, Hitesh [0000-0002-9418-7966]Reserbat-Plantey, Antoine [0000-0002-9106-8750]Barcons Ruiz, David [0000-0002-6271-2244]Soundarapandian, Karuppasamy [0000-0002-9664-9095]Stepanov, Petr [0000-0002-1121-3146]Koppens, Frank H. L. [0000-0001-9764-6120]Krishna Kumar, Roshan [0000-0003-0857-4466]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202520252025info:eu-repo/semantics/datasethttp://purl.org/coar/resource_type/c_ddb1application/vnd.ms-excelhttp://hdl.handle.net/10261/405948reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)InglésAgarwal, Hitesh; Reserbat-Plantey, Antoine; Barcons Ruiz, David; Soundarapandian, Karuppasamy; Li, Geng; Mkhitaryan, Vahagn; Osmond, Johann; Lozano, Helena; Watanabe, Kenji; Taniguchi, Takashi; Stepanov, Petr; Koppens, Frank H. L.; Krishna Kumar, Roshan. In situ engineering hexagonal boron nitride in van der Waals heterostructures with selective SF6 etching. https://doi.org/10.1088/2515-7639/adfd15. http://hdl.handle.net/10261/405945https://doi.org/10.5281/zenodo.15869927Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/4059482026-05-22T06:33:51Z
dc.title.none.fl_str_mv Data for main text figures - In situ engineering hexagonal boron nitride in van der Waals heterostructures with selective SF6 etching
title Data for main text figures - In situ engineering hexagonal boron nitride in van der Waals heterostructures with selective SF6 etching
spellingShingle Data for main text figures - In situ engineering hexagonal boron nitride in van der Waals heterostructures with selective SF6 etching
Agarwal, Hitesh
Graphene
SF6 etching
hBN etching
Van der Waals heterostructure
2D material
title_short Data for main text figures - In situ engineering hexagonal boron nitride in van der Waals heterostructures with selective SF6 etching
title_full Data for main text figures - In situ engineering hexagonal boron nitride in van der Waals heterostructures with selective SF6 etching
title_fullStr Data for main text figures - In situ engineering hexagonal boron nitride in van der Waals heterostructures with selective SF6 etching
title_full_unstemmed Data for main text figures - In situ engineering hexagonal boron nitride in van der Waals heterostructures with selective SF6 etching
title_sort Data for main text figures - In situ engineering hexagonal boron nitride in van der Waals heterostructures with selective SF6 etching
dc.creator.none.fl_str_mv Agarwal, Hitesh
Reserbat-Plantey, Antoine
Barcons Ruiz, David
Soundarapandian, Karuppasamy
Li, Geng
Mkhitaryan, Vahagn
Osmond, Johann
Lozano, Helena
Watanabe, Kenji
Taniguchi, Takashi
Stepanov, Petr
Koppens, Frank H. L.
Krishna Kumar, Roshan
author Agarwal, Hitesh
author_facet Agarwal, Hitesh
Reserbat-Plantey, Antoine
Barcons Ruiz, David
Soundarapandian, Karuppasamy
Li, Geng
Mkhitaryan, Vahagn
Osmond, Johann
Lozano, Helena
Watanabe, Kenji
Taniguchi, Takashi
Stepanov, Petr
Koppens, Frank H. L.
Krishna Kumar, Roshan
author_role author
author2 Reserbat-Plantey, Antoine
Barcons Ruiz, David
Soundarapandian, Karuppasamy
Li, Geng
Mkhitaryan, Vahagn
Osmond, Johann
Lozano, Helena
Watanabe, Kenji
Taniguchi, Takashi
Stepanov, Petr
Koppens, Frank H. L.
Krishna Kumar, Roshan
author2_role author
author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Agarwal, Hitesh [0000-0002-9418-7966]
Reserbat-Plantey, Antoine [0000-0002-9106-8750]
Barcons Ruiz, David [0000-0002-6271-2244]
Soundarapandian, Karuppasamy [0000-0002-9664-9095]
Stepanov, Petr [0000-0002-1121-3146]
Koppens, Frank H. L. [0000-0001-9764-6120]
Krishna Kumar, Roshan [0000-0003-0857-4466]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Graphene
SF6 etching
hBN etching
Van der Waals heterostructure
2D material
topic Graphene
SF6 etching
hBN etching
Van der Waals heterostructure
2D material
description Data includes AFM, Raman, and Transport measurements of graphene heterostructures before and after etching with SF6.
publishDate 2025
dc.date.none.fl_str_mv 2025
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/dataset
http://purl.org/coar/resource_type/c_ddb1
format dataset
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/405948
url http://hdl.handle.net/10261/405948
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Agarwal, Hitesh; Reserbat-Plantey, Antoine; Barcons Ruiz, David; Soundarapandian, Karuppasamy; Li, Geng; Mkhitaryan, Vahagn; Osmond, Johann; Lozano, Helena; Watanabe, Kenji; Taniguchi, Takashi; Stepanov, Petr; Koppens, Frank H. L.; Krishna Kumar, Roshan. In situ engineering hexagonal boron nitride in van der Waals heterostructures with selective SF6 etching. https://doi.org/10.1088/2515-7639/adfd15. http://hdl.handle.net/10261/405945
https://doi.org/10.5281/zenodo.15869927
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/vnd.ms-excel
dc.publisher.none.fl_str_mv Zenodo
publisher.none.fl_str_mv Zenodo
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869420417391788032
score 15,81155

Similares en LA Referencia