Manufacturing Issues of BEOL CMOS-MEMS Devices
© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to se...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2021 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/352851 |
| Acceso en línea: | https://hdl.handle.net/2117/352851 https://dx.doi.org/10.1109/ACCESS.2021.3086867 |
| Access Level: | acceso abierto |
| Palabra clave: | Metal oxide semiconductors, Complementary Digital electronics CMOS-MEMS Design techniques Hydrogen fluoride Silicon oxide Vapor-HF Release Reliability Yield Micromechanical devices Silicon Metals Etching Passivation CMOS process Aluminum Metall-òxid-semiconductors complementaris Electrònica digital Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics |
| Sumario: | © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
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