Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

Producción Científica

Detalles Bibliográficos
Autores: Castán Lanaspa, María Helena, Dueñas Carazo, Salvador, García García, Héctor, González Ossorio, Óscar, Domínguez, Leidy Azucena, Sahelices Fernández, Benjamín, Miranda, Enrique, Bargalló González, Mireia, Campabadal Segura, Francesca
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2018
País:España
Institución:Universidad de Valladolid
Repositorio:UVaDOC. Repositorio Documental de la Universidad de Valladolid
OAI Identifier:oai:uvadoc.uva.es:10324/44651
Acceso en línea:https://doi.org/10.1063/1.5024836
http://uvadoc.uva.es/handle/10324/44651
Access Level:acceso abierto
Palabra clave:Metal oxides
Óxidos metálicos
Dielectric properties
Propiedades dieléctricas
Thin films
Láminas delgadas
id ES_c77d2a85fad828eef0959d44d325a8e6
oai_identifier_str oai:uvadoc.uva.es:10324/44651
network_acronym_str ES
network_name_str España
repository_id_str
spelling Analysis and control of the intermediate memory states of RRAM devices by means of admittance parametersCastán Lanaspa, María HelenaDueñas Carazo, SalvadorGarcía García, HéctorGonzález Ossorio, ÓscarDomínguez, Leidy AzucenaSahelices Fernández, BenjamínMiranda, EnriqueBargalló González, MireiaCampabadal Segura, FrancescaMetal oxidesÓxidos metálicosDielectric propertiesPropiedades dieléctricasThin filmsLáminas delgadasProducción CientíficaA thorough study of the admittance of TiN/Ti/HfO2/W bipolar resistive memories [resistance random access memory (RRAM)] was carried out under different bias conditions and in a wide range of ac signal frequencies. We demonstrate that a continuum of intermediate states can be obtained by applying appropriate dc bias waveforms. Cumulative writing and erasing admittance cycles were performed by applying triangular voltage waveform of increasing amplitude. The influence of the initial conditions on the variation of the real (conductance) and imaginary (susceptance) components of the admittance is described. An accurate control of the memory state is achieved both in terms of the conductance and the susceptance by means of an adequate selection of the voltage values previously applied. A method to obtain three-dimensional voltage-conductance-susceptance state-plots is described in detail. Memory maps of admittance parameters as a function of the programming voltage are made by sensing the memory state at 0 V, without static power consumption. The multilevel nature of RRAM devices and their suitability for neuromorphic computation are demonstrated.Ministerio de Economía, Industria y Competitividad - Fondo Europeo de Desarrollo Regional (grants TEC2014-52152-C3-3-R and TEC2014- 52152-C3-1-R)AIP Publishing2018info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://doi.org/10.1063/1.5024836http://uvadoc.uva.es/handle/10324/44651reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolidinstname:Universidad de ValladolidIngléshttps://aip.scitation.org/doi/10.1063/1.5024836info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0/oai:uvadoc.uva.es:10324/446512026-06-13T12:44:47Z
dc.title.none.fl_str_mv Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
title Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
spellingShingle Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
Castán Lanaspa, María Helena
Metal oxides
Óxidos metálicos
Dielectric properties
Propiedades dieléctricas
Thin films
Láminas delgadas
title_short Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
title_full Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
title_fullStr Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
title_full_unstemmed Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
title_sort Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
dc.creator.none.fl_str_mv Castán Lanaspa, María Helena
Dueñas Carazo, Salvador
García García, Héctor
González Ossorio, Óscar
Domínguez, Leidy Azucena
Sahelices Fernández, Benjamín
Miranda, Enrique
Bargalló González, Mireia
Campabadal Segura, Francesca
author Castán Lanaspa, María Helena
author_facet Castán Lanaspa, María Helena
Dueñas Carazo, Salvador
García García, Héctor
González Ossorio, Óscar
Domínguez, Leidy Azucena
Sahelices Fernández, Benjamín
Miranda, Enrique
Bargalló González, Mireia
Campabadal Segura, Francesca
author_role author
author2 Dueñas Carazo, Salvador
García García, Héctor
González Ossorio, Óscar
Domínguez, Leidy Azucena
Sahelices Fernández, Benjamín
Miranda, Enrique
Bargalló González, Mireia
Campabadal Segura, Francesca
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Metal oxides
Óxidos metálicos
Dielectric properties
Propiedades dieléctricas
Thin films
Láminas delgadas
topic Metal oxides
Óxidos metálicos
Dielectric properties
Propiedades dieléctricas
Thin films
Láminas delgadas
description Producción Científica
publishDate 2018
dc.date.none.fl_str_mv 2018
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://doi.org/10.1063/1.5024836
http://uvadoc.uva.es/handle/10324/44651
url https://doi.org/10.1063/1.5024836
http://uvadoc.uva.es/handle/10324/44651
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv https://aip.scitation.org/doi/10.1063/1.5024836
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv AIP Publishing
publisher.none.fl_str_mv AIP Publishing
dc.source.none.fl_str_mv reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname:Universidad de Valladolid
instname_str Universidad de Valladolid
reponame_str UVaDOC. Repositorio Documental de la Universidad de Valladolid
collection UVaDOC. Repositorio Documental de la Universidad de Valladolid
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869419161846808576
score 15,301603

Similares en LA Referencia