Silicon-rich SiO_2/SiO_2 multilayers: A promising material for the third generation of solar cell

Si-rich-SiO_2(SRSO)/SiO_2 multilayers (MLs) have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters (Si-ncls) within the SRSO sublayer and annealing temperature influence optical absorption as well as photoluminescence. The optimized annealing temperature has been foun...

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Detalles Bibliográficos
Autores: Gourbilleau, F., Ternon, C., Maestre Varea, David, Palais, O., Dufour, C.
Tipo de recurso: artículo
Fecha de publicación:2009
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/42751
Acceso en línea:https://hdl.handle.net/20.500.14352/42751
Access Level:acceso abierto
Palabra clave:538.9
Si/SiO_2 Superlattices
Optical-properties
Nanocrystals
Luminescence
States
Dynamics
Defect
Films
Glass
SiO_2
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
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oai_identifier_str oai:docta.ucm.es:20.500.14352/42751
network_acronym_str ES
network_name_str España
repository_id_str
spelling Silicon-rich SiO_2/SiO_2 multilayers: A promising material for the third generation of solar cellGourbilleau, F.Ternon, C.Maestre Varea, DavidPalais, O.Dufour, C.538.9Si/SiO_2 SuperlatticesOptical-propertiesNanocrystalsLuminescenceStatesDynamicsDefectFilmsGlassSiO_2Física de materialesFísica del estado sólido2211 Física del Estado SólidoSi-rich-SiO_2(SRSO)/SiO_2 multilayers (MLs) have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters (Si-ncls) within the SRSO sublayer and annealing temperature influence optical absorption as well as photoluminescence. The optimized annealing temperature has been found to be 1100°C, which allows the recovery of defects and thus enhances photoluminescence. Four MLs with Si-ncl size ranging from 1.5 to 8 nm have been annealed using the optimized conditions and then studied by transmission measurements. Optical absorption has been modeled so that a size effect in the linear absorption coefficient α (in cm^(-1)) has been evidenced and correlated with TEM observations. It is demonstrated that amorphous Si-ncl absorption is fourfold higher than that of crystalline Si ncls.American Institute of PhysicsUniversidad Complutense de Madrid20092009-07-0120092009-07-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/42751reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/427512026-06-02T12:44:21Z
dc.title.none.fl_str_mv Silicon-rich SiO_2/SiO_2 multilayers: A promising material for the third generation of solar cell
title Silicon-rich SiO_2/SiO_2 multilayers: A promising material for the third generation of solar cell
spellingShingle Silicon-rich SiO_2/SiO_2 multilayers: A promising material for the third generation of solar cell
Gourbilleau, F.
538.9
Si/SiO_2 Superlattices
Optical-properties
Nanocrystals
Luminescence
States
Dynamics
Defect
Films
Glass
SiO_2
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
title_short Silicon-rich SiO_2/SiO_2 multilayers: A promising material for the third generation of solar cell
title_full Silicon-rich SiO_2/SiO_2 multilayers: A promising material for the third generation of solar cell
title_fullStr Silicon-rich SiO_2/SiO_2 multilayers: A promising material for the third generation of solar cell
title_full_unstemmed Silicon-rich SiO_2/SiO_2 multilayers: A promising material for the third generation of solar cell
title_sort Silicon-rich SiO_2/SiO_2 multilayers: A promising material for the third generation of solar cell
dc.creator.none.fl_str_mv Gourbilleau, F.
Ternon, C.
Maestre Varea, David
Palais, O.
Dufour, C.
author Gourbilleau, F.
author_facet Gourbilleau, F.
Ternon, C.
Maestre Varea, David
Palais, O.
Dufour, C.
author_role author
author2 Ternon, C.
Maestre Varea, David
Palais, O.
Dufour, C.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Si/SiO_2 Superlattices
Optical-properties
Nanocrystals
Luminescence
States
Dynamics
Defect
Films
Glass
SiO_2
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
topic 538.9
Si/SiO_2 Superlattices
Optical-properties
Nanocrystals
Luminescence
States
Dynamics
Defect
Films
Glass
SiO_2
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
description Si-rich-SiO_2(SRSO)/SiO_2 multilayers (MLs) have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters (Si-ncls) within the SRSO sublayer and annealing temperature influence optical absorption as well as photoluminescence. The optimized annealing temperature has been found to be 1100°C, which allows the recovery of defects and thus enhances photoluminescence. Four MLs with Si-ncl size ranging from 1.5 to 8 nm have been annealed using the optimized conditions and then studied by transmission measurements. Optical absorption has been modeled so that a size effect in the linear absorption coefficient α (in cm^(-1)) has been evidenced and correlated with TEM observations. It is demonstrated that amorphous Si-ncl absorption is fourfold higher than that of crystalline Si ncls.
publishDate 2009
dc.date.none.fl_str_mv 2009
2009-07-01
2009
2009-07-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/42751
url https://hdl.handle.net/20.500.14352/42751
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869419099610677248
score 15,300719

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