Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cells
SiO_2 multilayers with embedded Si nanocrystals (Si-ncs) were investigated as an approach for developing highly efficient all Si tandem solar cells. The nanostructured samples, fabricated by means of a reactive magnetron sputtering, were structurally and optoelectronically characterized using differ...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2010 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/42750 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/42750 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Silicon Nanostructures Nanoparticles Nanocrystals Luminescence Fabrication Absorption Lifetime Industry Samples Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
| Sumario: | SiO_2 multilayers with embedded Si nanocrystals (Si-ncs) were investigated as an approach for developing highly efficient all Si tandem solar cells. The nanostructured samples, fabricated by means of a reactive magnetron sputtering, were structurally and optoelectronically characterized using different techniques. High resolution transmission electron microscopy (TEM) and energy filtered images in TEM show a high density of Si-nc with uniform sizes below 4 nm, while electrical characterization indicates high resistance values (10^2 kΩ) of these samples. In order to develop a better understanding of the optoelectronical behavior, photocurrent I-V curves were measured, obtaining variations under "dark" or "illumination" conditions. Recombination lifetimes in the order of tenths of nanoseconds were estimated by applying the transverse pump/probe technique. |
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