Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing

Ex situ deposited SiNx:H/In0.53Ga0.47As metal-insulator-semiconductor devices, with a minimum of interface state density of 3.5 x 10(11) eV(-1) cm(-2) have been obtained by electron cyclotron resonance plasma method at a low substrate temperature (200 degrees C), after a rapid thermal annealing trea...

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Detalles Bibliográficos
Autores: Martil De La Plaza, Ignacio, González Díaz, Germán
Tipo de recurso: artículo
Fecha de publicación:1999
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/59279
Acceso en línea:https://hdl.handle.net/20.500.14352/59279
Access Level:acceso abierto
Palabra clave:537
Insulator-Semiconductor Structures
Electron-Cyclotron-Resonance
Layers.
Electricidad
Electrónica (Física)
2202.03 Electricidad
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oai_identifier_str oai:docta.ucm.es:20.500.14352/59279
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repository_id_str
spelling Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealingMartil De La Plaza, IgnacioGonzález Díaz, Germán537Insulator-Semiconductor StructuresElectron-Cyclotron-ResonanceLayers.ElectricidadElectrónica (Física)2202.03 ElectricidadEx situ deposited SiNx:H/In0.53Ga0.47As metal-insulator-semiconductor devices, with a minimum of interface state density of 3.5 x 10(11) eV(-1) cm(-2) have been obtained by electron cyclotron resonance plasma method at a low substrate temperature (200 degrees C), after a rapid thermal annealing treatment. The effects of annealing temperature on interfacial and bull; electrical properties have been analysed using the C-V high-low frequency method and I-V measurements. The results show that, up to 600 degrees C, the annealing procedure gradually improves the interface properties of the devices. The frequency dispersion, the hysteresis and the interface trap density diminish, while the resistivity and the electrical breakdown field of the insulator film increase up to values of 8 x 10(15)Omega cm and 4 MV cm(-1), respectively. We explain this behaviour in terms of the thermal relaxation and the reconstruction of the SiNx:H lattice and its interface with the In0.53Ga0.47As. At higher annealing temperatures, a sharp degradation of the structure occurs.Iop Publishing LtdUniversidad Complutense de Madrid19991999-07-0119991999-07-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/59279reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/592792026-06-02T12:44:21Z
dc.title.none.fl_str_mv Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing
title Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing
spellingShingle Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing
Martil De La Plaza, Ignacio
537
Insulator-Semiconductor Structures
Electron-Cyclotron-Resonance
Layers.
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing
title_full Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing
title_fullStr Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing
title_full_unstemmed Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing
title_sort Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing
dc.creator.none.fl_str_mv Martil De La Plaza, Ignacio
González Díaz, Germán
author Martil De La Plaza, Ignacio
author_facet Martil De La Plaza, Ignacio
González Díaz, Germán
author_role author
author2 González Díaz, Germán
author2_role author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
Insulator-Semiconductor Structures
Electron-Cyclotron-Resonance
Layers.
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
Insulator-Semiconductor Structures
Electron-Cyclotron-Resonance
Layers.
Electricidad
Electrónica (Física)
2202.03 Electricidad
description Ex situ deposited SiNx:H/In0.53Ga0.47As metal-insulator-semiconductor devices, with a minimum of interface state density of 3.5 x 10(11) eV(-1) cm(-2) have been obtained by electron cyclotron resonance plasma method at a low substrate temperature (200 degrees C), after a rapid thermal annealing treatment. The effects of annealing temperature on interfacial and bull; electrical properties have been analysed using the C-V high-low frequency method and I-V measurements. The results show that, up to 600 degrees C, the annealing procedure gradually improves the interface properties of the devices. The frequency dispersion, the hysteresis and the interface trap density diminish, while the resistivity and the electrical breakdown field of the insulator film increase up to values of 8 x 10(15)Omega cm and 4 MV cm(-1), respectively. We explain this behaviour in terms of the thermal relaxation and the reconstruction of the SiNx:H lattice and its interface with the In0.53Ga0.47As. At higher annealing temperatures, a sharp degradation of the structure occurs.
publishDate 1999
dc.date.none.fl_str_mv 1999
1999-07-01
1999
1999-07-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/59279
url https://hdl.handle.net/20.500.14352/59279
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Iop Publishing Ltd
publisher.none.fl_str_mv Iop Publishing Ltd
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300724

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