Cita APA

Martil De La Plaza, I., & González Díaz, G. (1999). Gate quality of ex situ deposited Al/SiNx: H/n-In0.53Ga0.47As devices after rapid thermal annealing.

Citación estilo Chicago

Martil De La Plaza, Ignacio, y Germán González Díaz. Gate Quality of Ex Situ Deposited Al/SiNx: H/n-In0.53Ga0.47As Devices After Rapid Thermal Annealing. 1999.

Cita MLA

Martil De La Plaza, Ignacio, y Germán González Díaz. Gate Quality of Ex Situ Deposited Al/SiNx: H/n-In0.53Ga0.47As Devices After Rapid Thermal Annealing. 1999.