Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices
In the present work, we report a solution-based strategy to produce crystallographically textured SnSe bulk nanomaterials and printed layers with optimized thermoelectric performance in the direction normal to the substrate. Our strategy is based on the formulation of a molecular precursor that can...
| Autores: | , , , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2020 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/343315 |
| Acceso en línea: | https://hdl.handle.net/2117/343315 https://dx.doi.org/10.1021/acsami.0c04331 |
| Access Level: | acceso abierto |
| Palabra clave: | Nanostructured materials Molecular ink SnSe Thermoelectricity Printing Nanomaterial Materials nanoestructurats Àrees temàtiques de la UPC::Enginyeria dels materials Àrees temàtiques de la UPC::Enginyeria química |
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Tin selenide molecular precursor for the solution processing of thermoelectric materials and devicesZhang, Yu|||0009-0006-6836-9500Xing, CongcongZhang, TingYu, XiaotingArbiol, JordiLlorca Piqué, Jordi|||0000-0002-7447-9582Cadavid, Doris|||0000-0002-1376-6078Ibáñez, MaríaCabot, AndreuNanostructured materialsMolecular inkSnSeThermoelectricityPrintingNanomaterialMaterials nanoestructuratsÀrees temàtiques de la UPC::Enginyeria dels materialsÀrees temàtiques de la UPC::Enginyeria químicaIn the present work, we report a solution-based strategy to produce crystallographically textured SnSe bulk nanomaterials and printed layers with optimized thermoelectric performance in the direction normal to the substrate. Our strategy is based on the formulation of a molecular precursor that can be continuously decomposed to produce a SnSe powder or printed into predefined patterns. The precursor formulation and decomposition conditions are optimized to produce pure phase 2D SnSe nanoplates. The printed layer and the bulk material obtained after hot press displays a clear preferential orientation of the crystallographic domains, resulting in an ultralow thermal conductivity of 0.55 W m–1 K–1 in the direction normal to the substrate. Such textured nanomaterials present highly anisotropic properties with the best thermoelectric performance in plane, i.e., in the directions parallel to the substrate, which coincide with the crystallographic bc plane of SnSe. This is an unfortunate characteristic because thermoelectric devices are designed to create/harvest temperature gradients in the direction normal to the substrate. We further demonstrate that this limitation can be overcome with the introduction of small amounts of tellurium in the precursor. The presence of tellurium allows one to reduce the band gap and increase both the charge carrier concentration and the mobility, especially the cross plane, with a minimal decrease of the Seebeck coefficient. These effects translate into record out of plane ZT values at 800 K.20202020-05-2120212021-04-08journal articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/2117/343315https://dx.doi.org/10.1021/acsami.0c04331reponame:UPCommons. Portal del coneixement obert de la UPCinstname:Universitat Politècnica de Catalunya (UPC)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Attribution-NonCommercial-NoDerivs 3.0 Spainhttp://creativecommons.org/licenses/by-nc-nd/3.0/es/info:eu-repo/semantics/openAccessoai:upcommons.upc.edu:2117/3433152026-05-27T15:37:01Z |
| dc.title.none.fl_str_mv |
Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices |
| title |
Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices |
| spellingShingle |
Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices Zhang, Yu|||0009-0006-6836-9500 Nanostructured materials Molecular ink SnSe Thermoelectricity Printing Nanomaterial Materials nanoestructurats Àrees temàtiques de la UPC::Enginyeria dels materials Àrees temàtiques de la UPC::Enginyeria química |
| title_short |
Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices |
| title_full |
Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices |
| title_fullStr |
Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices |
| title_full_unstemmed |
Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices |
| title_sort |
Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices |
| dc.creator.none.fl_str_mv |
Zhang, Yu|||0009-0006-6836-9500 Xing, Congcong Zhang, Ting Yu, Xiaoting Arbiol, Jordi Llorca Piqué, Jordi|||0000-0002-7447-9582 Cadavid, Doris|||0000-0002-1376-6078 Ibáñez, María Cabot, Andreu |
| author |
Zhang, Yu|||0009-0006-6836-9500 |
| author_facet |
Zhang, Yu|||0009-0006-6836-9500 Xing, Congcong Zhang, Ting Yu, Xiaoting Arbiol, Jordi Llorca Piqué, Jordi|||0000-0002-7447-9582 Cadavid, Doris|||0000-0002-1376-6078 Ibáñez, María Cabot, Andreu |
| author_role |
author |
| author2 |
Xing, Congcong Zhang, Ting Yu, Xiaoting Arbiol, Jordi Llorca Piqué, Jordi|||0000-0002-7447-9582 Cadavid, Doris|||0000-0002-1376-6078 Ibáñez, María Cabot, Andreu |
| author2_role |
author author author author author author author author |
| dc.subject.none.fl_str_mv |
Nanostructured materials Molecular ink SnSe Thermoelectricity Printing Nanomaterial Materials nanoestructurats Àrees temàtiques de la UPC::Enginyeria dels materials Àrees temàtiques de la UPC::Enginyeria química |
| topic |
Nanostructured materials Molecular ink SnSe Thermoelectricity Printing Nanomaterial Materials nanoestructurats Àrees temàtiques de la UPC::Enginyeria dels materials Àrees temàtiques de la UPC::Enginyeria química |
| description |
In the present work, we report a solution-based strategy to produce crystallographically textured SnSe bulk nanomaterials and printed layers with optimized thermoelectric performance in the direction normal to the substrate. Our strategy is based on the formulation of a molecular precursor that can be continuously decomposed to produce a SnSe powder or printed into predefined patterns. The precursor formulation and decomposition conditions are optimized to produce pure phase 2D SnSe nanoplates. The printed layer and the bulk material obtained after hot press displays a clear preferential orientation of the crystallographic domains, resulting in an ultralow thermal conductivity of 0.55 W m–1 K–1 in the direction normal to the substrate. Such textured nanomaterials present highly anisotropic properties with the best thermoelectric performance in plane, i.e., in the directions parallel to the substrate, which coincide with the crystallographic bc plane of SnSe. This is an unfortunate characteristic because thermoelectric devices are designed to create/harvest temperature gradients in the direction normal to the substrate. We further demonstrate that this limitation can be overcome with the introduction of small amounts of tellurium in the precursor. The presence of tellurium allows one to reduce the band gap and increase both the charge carrier concentration and the mobility, especially the cross plane, with a minimal decrease of the Seebeck coefficient. These effects translate into record out of plane ZT values at 800 K. |
| publishDate |
2020 |
| dc.date.none.fl_str_mv |
2020 2020-05-21 2021 2021-04-08 |
| dc.type.none.fl_str_mv |
journal article http://purl.org/coar/resource_type/c_6501 AM http://purl.org/coar/version/c_ab4af688f83e57aa |
| dc.type.openaire.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/2117/343315 https://dx.doi.org/10.1021/acsami.0c04331 |
| url |
https://hdl.handle.net/2117/343315 https://dx.doi.org/10.1021/acsami.0c04331 |
| dc.language.none.fl_str_mv |
Inglés eng |
| language_invalid_str_mv |
Inglés |
| language |
eng |
| dc.rights.none.fl_str_mv |
open access http://purl.org/coar/access_right/c_abf2 Attribution-NonCommercial-NoDerivs 3.0 Spain http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
| dc.rights.openaire.fl_str_mv |
info:eu-repo/semantics/openAccess |
| rights_invalid_str_mv |
open access http://purl.org/coar/access_right/c_abf2 Attribution-NonCommercial-NoDerivs 3.0 Spain http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
application/pdf |
| dc.source.none.fl_str_mv |
reponame:UPCommons. Portal del coneixement obert de la UPC instname:Universitat Politècnica de Catalunya (UPC) |
| instname_str |
Universitat Politècnica de Catalunya (UPC) |
| reponame_str |
UPCommons. Portal del coneixement obert de la UPC |
| collection |
UPCommons. Portal del coneixement obert de la UPC |
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1869418521492979712 |
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15,300724 |