Enhanced thermoelectric performance of n-type bi2se3 nanosheets through sn doping

The cost-effective conversion of low-grade heat into electricity using thermoelectric devices requires developing alternative materials and material processing technologies able to reduce the currently high device manufacturing costs. In this direction, thermoelectric materials that do not rely on r...

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Detalles Bibliográficos
Autores: Li, Mengyao, Zhang, Yu|||0009-0006-6836-9500, Zhang, Ting, Zuo, Yong, Xiao, Ke, Arbiol, Jordi, Llorca Piqué, Jordi|||0000-0002-7447-9582, Liu, Yu, Cabot, Andreu
Tipo de recurso: artículo
Fecha de publicación:2021
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/355611
Acceso en línea:https://hdl.handle.net/2117/355611
https://dx.doi.org/10.3390/nano11071827
Access Level:acceso abierto
Palabra clave:Nanostructured materials
Thermoelectric
Bi2Se3
Sn doping
Materials nanoestructurats
Àrees temàtiques de la UPC::Enginyeria química
Descripción
Sumario:The cost-effective conversion of low-grade heat into electricity using thermoelectric devices requires developing alternative materials and material processing technologies able to reduce the currently high device manufacturing costs. In this direction, thermoelectric materials that do not rely on rare or toxic elements such as tellurium or lead need to be produced using high-throughput technologies not involving high temperatures and long processes. Bi2Se3 is an obvious possible Te-free alternative to Bi2Te3 for ambient temperature thermoelectric applications, but its performance is still low for practical applications, and additional efforts toward finding proper dopants are required. Here, we report a scalable method to produce Bi2Se3 nanosheets at low synthesis temperatures. We studied the influence of different dopants on the thermoelectric properties of this material. Among the elements tested, we demonstrated that Sn doping resulted in the best performance. Sn incorporation resulted in a significant improvement to the Bi2Se3 Seebeck coefficient and a reduction in the thermal conductivity in the direction of the hot-press axis, resulting in an overall 60% improvement in the thermoelectric figure of merit of Bi2Se3.