Tin Diselenide Molecular Precursor for Solution-Processable Thermoelectric Materials
In the present work, we detail a fast and simple solution-based method to synthesize hexagonal SnSe nanoplates (NPLs) and their use to produce crystallographically textured SnSe nanomaterials. We also demonstrate that the same strategy can be used to produce orthorhombic SnSe nanostructures and nano...
| Autores: | , , , , , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2018 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:216231 |
| Acceso en línea: | https://ddd.uab.cat/record/216231 https://dx.doi.org/urn:doi:10.1002/anie.201809847 |
| Access Level: | acceso abierto |
| Palabra clave: | Modulation doping Nanomaterial Reactive ink SnSe2 Thermoelectricity |
| Sumario: | In the present work, we detail a fast and simple solution-based method to synthesize hexagonal SnSe nanoplates (NPLs) and their use to produce crystallographically textured SnSe nanomaterials. We also demonstrate that the same strategy can be used to produce orthorhombic SnSe nanostructures and nanomaterials. NPLs are grown through a screw dislocation-driven mechanism. This mechanism typically results in pyramidal structures, but we demonstrate here that the growth from multiple dislocations results in flower-like structures. Crystallographically textured SnSe bulk nanomaterials obtained from the hot pressing of these SnSe structures display highly anisotropic charge and heat transport properties and thermoelectric (TE) figures of merit limited by relatively low electrical conductivities. To improve this parameter, SnSe NPLs are blended here with metal nanoparticles. The electrical conductivities of the blends are significantly improved with respect to bare SnSe NPLs, what translates into a three-fold increase of the TE Figure of merit, reaching unprecedented ZT values up to 0.65. |
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