Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters

We present second-order photon correlation measurements on single InP/(Ga,In)P quantum dots as a function of temperature. Low background emission allows to obtain antibunching minima g(2)(0) below 0.25 up to 45 K. The antibunching time R increases or decreases with temperature depending on the quant...

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Autores: Nowak, A. K., Gallardo, E., Sarkar, D., Van der Meulen, H. P., Calleja, J. M., Ripalda, José María, González Díez, Yolanda, González Sotos, Luisa
Tipo de recurso: artículo
Fecha de publicación:2009
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/18076
Acceso en línea:http://hdl.handle.net/10261/18076
Access Level:acceso abierto
Palabra clave:Excitons
Gallium compounds
III-V semiconductors
Indium compounds
Semiconductor quantum dots
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spelling Thermal effects in InP/(Ga,In)P quantum-dot single-photon emittersNowak, A. K.Gallardo, E.Sarkar, D.Van der Meulen, H. P.Calleja, J. M.Ripalda, José MaríaGonzález Díez, YolandaGonzález Sotos, LuisaExcitonsGallium compoundsIII-V semiconductorsIndium compoundsSemiconductor quantum dotsWe present second-order photon correlation measurements on single InP/(Ga,In)P quantum dots as a function of temperature. Low background emission allows to obtain antibunching minima g(2)(0) below 0.25 up to 45 K. The antibunching time R increases or decreases with temperature depending on the quantum-dot size. The two trends result from a competition between hole thermal excitation and dark-to-bright exciton transitions. The former prevails in smaller dots showing increasing R with temperature, while the latter dominates in larger quantum dots showing decreasing R with temperature.This work has been supported by research contracts of the Spanish Ministry of Education (Grant No. MAT2008-01555/NAN), Consolider CSD (Grant No. 2006–19), the Community of Madrid (Grant No. CAMS-0505-ESP-0200), and the Spanish Ministry of Science and Innovation (Grant No.Nanoinpho-QD TEC2008-06756-C03-01).Peer reviewedAmerican Physical Society200920092009info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501143600 bytesapplication/pdfhttp://hdl.handle.net/10261/18076reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://link.aps.org/doi/10.1103/PhysRevB.80.161305http://dx.doi.org/10.1103/PhysRevB.80.161305info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/180762026-05-22T06:33:51Z
dc.title.none.fl_str_mv Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters
title Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters
spellingShingle Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters
Nowak, A. K.
Excitons
Gallium compounds
III-V semiconductors
Indium compounds
Semiconductor quantum dots
title_short Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters
title_full Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters
title_fullStr Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters
title_full_unstemmed Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters
title_sort Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters
dc.creator.none.fl_str_mv Nowak, A. K.
Gallardo, E.
Sarkar, D.
Van der Meulen, H. P.
Calleja, J. M.
Ripalda, José María
González Díez, Yolanda
González Sotos, Luisa
author Nowak, A. K.
author_facet Nowak, A. K.
Gallardo, E.
Sarkar, D.
Van der Meulen, H. P.
Calleja, J. M.
Ripalda, José María
González Díez, Yolanda
González Sotos, Luisa
author_role author
author2 Gallardo, E.
Sarkar, D.
Van der Meulen, H. P.
Calleja, J. M.
Ripalda, José María
González Díez, Yolanda
González Sotos, Luisa
author2_role author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Excitons
Gallium compounds
III-V semiconductors
Indium compounds
Semiconductor quantum dots
topic Excitons
Gallium compounds
III-V semiconductors
Indium compounds
Semiconductor quantum dots
description We present second-order photon correlation measurements on single InP/(Ga,In)P quantum dots as a function of temperature. Low background emission allows to obtain antibunching minima g(2)(0) below 0.25 up to 45 K. The antibunching time R increases or decreases with temperature depending on the quantum-dot size. The two trends result from a competition between hole thermal excitation and dark-to-bright exciton transitions. The former prevails in smaller dots showing increasing R with temperature, while the latter dominates in larger quantum dots showing decreasing R with temperature.
publishDate 2009
dc.date.none.fl_str_mv 2009
2009
2009
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/18076
url http://hdl.handle.net/10261/18076
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://link.aps.org/doi/10.1103/PhysRevB.80.161305
http://dx.doi.org/10.1103/PhysRevB.80.161305
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 143600 bytes
application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,81155

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