Supplementary Material for Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires
See the supplementary material for detailed information on the performed measurements, additional transfer characteristics data, the methodology used to extract threshold voltage and mobility, details on hysteresis computations and bandwidth measurements in both the amplifier and NWFET configuration...
| Autores: | , , , , , , , , |
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| Tipo de recurso: | conjunto de datos |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/415673 |
| Acceso en línea: | http://hdl.handle.net/10261/415673 |
| Access Level: | acceso abierto |
| Palabra clave: | Nanowires Selective area growth Field-effect transistor |
| Sumario: | See the supplementary material for detailed information on the performed measurements, additional transfer characteristics data, the methodology used to extract threshold voltage and mobility, details on hysteresis computations and bandwidth measurements in both the amplifier and NWFET configurations. |
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