Meucci, G., Olšteins, D., Carrad, D. J., Nagda, G., Beznasyuk, D. V., Petersen, C. E. N., . . . Jespersen, T. S. (2025). Supplementary Material for Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires.
Citação norma ChicagoMeucci, Giulia, Dāgs Olšteins, Damon J. Carrad, Gunjan Nagda, Daria V. Beznasyuk, Christian Emanuel N. Petersen, Sara Martí-Sànchez, Jordi Arbiol, e Thomas Sand Jespersen. Supplementary Material for Cryogenic Performance of Field-effect Transistors and Amplifiers Based On Selective Area Grown InAs Nanowires. 2025.
Citação norma MLAMeucci, Giulia, et al. Supplementary Material for Cryogenic Performance of Field-effect Transistors and Amplifiers Based On Selective Area Grown InAs Nanowires. 2025.