High-bandwidth organic photodetector analyzed by impedance spectroscopy

An organic bulk heterojunction photodetector (OPD) is fabricated on the basis of a blend of poly(3-hexyl thiophene):1-(3-methoxycarbonyl)-propyl-1-1-phenyl-(6,6) C61. The OPD responsivity is calculated from current density-voltage characteristic (J-V) under green-LED illumination obtaining 1 A/W. Fr...

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Detalles Bibliográficos
Autores: Arredondo, Belén, Dios, Cristina de, Vergaz, Ricardo, Pozo, Gonzalo del, Romero, Beatriz
Tipo de recurso: artículo
Fecha de publicación:2012
País:España
Institución:Universidad Rey Juan Carlos
Repositorio:BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos
OAI Identifier:oai:burjcdigital.urjc.es:10115/12032
Acceso en línea:http://hdl.handle.net/10115/12032
Access Level:acceso abierto
Palabra clave:Bulk heterojunction
cutoff frequency
impedance spectroscopy
organic photodetector.
3307 Tecnología Electrónica
3306.02 Aplicaciones Eléctricas
Descripción
Sumario:An organic bulk heterojunction photodetector (OPD) is fabricated on the basis of a blend of poly(3-hexyl thiophene):1-(3-methoxycarbonyl)-propyl-1-1-phenyl-(6,6) C61. The OPD responsivity is calculated from current density-voltage characteristic (J-V) under green-LED illumination obtaining 1 A/W. Frequency response at different biases is measured, which shows a high ¿3-dB cutoff frequency of 343 kHz at ¿3 V. Impedance measurements are carried out at different reverse biases, and the results are fitted with a small signal equivalent circuit. The device cutoff frequency (fc) can be estimated with the parameters extracted from this circuit obtaining good agreement between measured and calculated fc.