Single Event Upsets under 14-MeV Neutrons in a 28-nm SRAM-based FPGA in Static Mode
A sensitivity characterization of a Xilinx Artix-7 FPGA against 14.2 MeV neutrons is presented. The content of the internal SRAMs and flip-flops were downloaded in a PC and compared with a golden version of it. Flipped cells were identified and classified as cells of the configuration RAM, BRAM, or...
| Autores: | , , , , , , , , , |
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| Tipo de documento: | artigo |
| Data de publicação: | 2020 |
| País: | España |
| Recursos: | Universidad Complutense de Madrid (UCM) |
| Repositório: | Docta Complutense |
| Idioma: | inglês |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/6088 |
| Acesso em linha: | https://hdl.handle.net/20.500.14352/6088 |
| Access Level: | Acceso aberto |
| Palavra-chave: | FPGA neutron tests radiation hardness reliability soft error. Electrónica (Física) Radiactividad Circuitos integrados Electrónica (Informática) 2203.07 Circuitos Integrados 2203 Electrónica |
| Resumo: | A sensitivity characterization of a Xilinx Artix-7 FPGA against 14.2 MeV neutrons is presented. The content of the internal SRAMs and flip-flops were downloaded in a PC and compared with a golden version of it. Flipped cells were identified and classified as cells of the configuration RAM, BRAM, or flip-flops. SBUs and MCUs with multiplicities ranging from 2 to 8 were identified using a statistical method. Possible shapes of multiple events are also investigated, showing a trend to follow wordlines. Finally, MUSCA SEP3 was used to make assesment for actual environments and an improvement of SEU injection test is proposed. |
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