Analysis and Simulation of Distributed Nonlinearities in Ferroelectrics and superconductors for Microwave Applications
This paper gives closed-form equations for the intermodulation and third harmonic signals generated in a nonlinear transmission line with distributed quadratic nonlinearities in the conductor and dielectric. Although the formulation developed is general, it is intended to be used in planar devices c...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2006 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/1092 |
| Acceso en línea: | https://hdl.handle.net/2117/1092 |
| Access Level: | acceso abierto |
| Palabra clave: | High temperature superconductors Ferroelectric devices Microwave devices ferroelectric devices ferroelectric materials high-temperature superconductors microwave devices microwave materials superconducting microwave devices superconducting transmission lines Superconductors a altes temperatures Ferroelectricitat Microones -- Dispositius Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques |
| Sumario: | This paper gives closed-form equations for the intermodulation and third harmonic signals generated in a nonlinear transmission line with distributed quadratic nonlinearities in the conductor and dielectric. Although the formulation developed is general, it is intended to be used in planar devices combining high-temperature superconductor (HTS) and oxide ferroelectrics. The analysis in this paper shows that the intermodulation and third harmonic signals produced by an HTS tend to cancel those of a ferroelectric, and that full cancellation is theoretically possible. This opens the way for using HTS/ferroelectric multilayers, not (only) for their tunable or phase-shifting properties, but for highly linear spurious-free planar HTS devices. |
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