Supplementary Information: Reducing charge noise in quantum dots by using thin silicon quantum wells

10 pages. -- Contents: Measurement of the thickness of the quantum wells. -- Charge noise measurements. -- Noise spectra for a quantum dot from heterostructure C 5. -- Frequency and gate voltage dependence of noise spectra. -- Operation gate voltages for charge sensor quantum dots. -- 6. Lever arm e...

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Autores: Paquelet Wuetz, Brian, Degli Esposti, Davide, Zwerver, Anne-Marije J., Amitonov, Sergey V., Botifoll, Marc, Arbiol, Jordi, Sammak, Amir, Vandersypen, Lieven M. K., Russ, Maximilian, Scappucci, Giordano
Tipo de recurso: conjunto de datos
Fecha de publicación:2023
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/337338
Acceso en línea:http://hdl.handle.net/10261/337338
Access Level:acceso abierto
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spelling Supplementary Information: Reducing charge noise in quantum dots by using thin silicon quantum wellsPaquelet Wuetz, BrianDegli Esposti, DavideZwerver, Anne-Marije J.Amitonov, Sergey V.Botifoll, MarcArbiol, JordiSammak, AmirVandersypen, Lieven M. K.Russ, MaximilianScappucci, Giordano10 pages. -- Contents: Measurement of the thickness of the quantum wells. -- Charge noise measurements. -- Noise spectra for a quantum dot from heterostructure C 5. -- Frequency and gate voltage dependence of noise spectra. -- Operation gate voltages for charge sensor quantum dots. -- 6. Lever arm extraction. -- 7. Simulations of dephasing times and gate fidelities. -- Dephasing of charge qubit. -- Dephasing of spin qubit. -- Gate fidelity simulations. -- ReferencesPeer reviewedNature Publishing GroupConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202320232023info:eu-repo/semantics/datasethttp://purl.org/coar/resource_type/c_ddb1application/pdfhttp://hdl.handle.net/10261/337338reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)InglésPaquelet Wuetz, Brian; Degli Esposti, Davide; Zwerver, Anne-Marije J.; Amitonov, Sergey V.; Botifoll, Marc; Arbiol, Jordi; Sammak, Amir; Vandersypen, Lieven M. K.; Russ, Maximilian; Scappucci, Giordano. Reducing charge noise in quantum dots by using thin silicon quantum wells. https://doi.org/10.1038/s41467-023-36951-w. http://hdl.handle.net/10261/336778https://doi.org/10.1038/s41467-023-36951-wSíinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3373382026-05-22T06:33:51Z
dc.title.none.fl_str_mv Supplementary Information: Reducing charge noise in quantum dots by using thin silicon quantum wells
title Supplementary Information: Reducing charge noise in quantum dots by using thin silicon quantum wells
spellingShingle Supplementary Information: Reducing charge noise in quantum dots by using thin silicon quantum wells
Paquelet Wuetz, Brian
title_short Supplementary Information: Reducing charge noise in quantum dots by using thin silicon quantum wells
title_full Supplementary Information: Reducing charge noise in quantum dots by using thin silicon quantum wells
title_fullStr Supplementary Information: Reducing charge noise in quantum dots by using thin silicon quantum wells
title_full_unstemmed Supplementary Information: Reducing charge noise in quantum dots by using thin silicon quantum wells
title_sort Supplementary Information: Reducing charge noise in quantum dots by using thin silicon quantum wells
dc.creator.none.fl_str_mv Paquelet Wuetz, Brian
Degli Esposti, Davide
Zwerver, Anne-Marije J.
Amitonov, Sergey V.
Botifoll, Marc
Arbiol, Jordi
Sammak, Amir
Vandersypen, Lieven M. K.
Russ, Maximilian
Scappucci, Giordano
author Paquelet Wuetz, Brian
author_facet Paquelet Wuetz, Brian
Degli Esposti, Davide
Zwerver, Anne-Marije J.
Amitonov, Sergey V.
Botifoll, Marc
Arbiol, Jordi
Sammak, Amir
Vandersypen, Lieven M. K.
Russ, Maximilian
Scappucci, Giordano
author_role author
author2 Degli Esposti, Davide
Zwerver, Anne-Marije J.
Amitonov, Sergey V.
Botifoll, Marc
Arbiol, Jordi
Sammak, Amir
Vandersypen, Lieven M. K.
Russ, Maximilian
Scappucci, Giordano
author2_role author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
description 10 pages. -- Contents: Measurement of the thickness of the quantum wells. -- Charge noise measurements. -- Noise spectra for a quantum dot from heterostructure C 5. -- Frequency and gate voltage dependence of noise spectra. -- Operation gate voltages for charge sensor quantum dots. -- 6. Lever arm extraction. -- 7. Simulations of dephasing times and gate fidelities. -- Dephasing of charge qubit. -- Dephasing of spin qubit. -- Gate fidelity simulations. -- References
publishDate 2023
dc.date.none.fl_str_mv 2023
2023
2023
dc.type.none.fl_str_mv info:eu-repo/semantics/dataset
http://purl.org/coar/resource_type/c_ddb1
format dataset
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/337338
url http://hdl.handle.net/10261/337338
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Paquelet Wuetz, Brian; Degli Esposti, Davide; Zwerver, Anne-Marije J.; Amitonov, Sergey V.; Botifoll, Marc; Arbiol, Jordi; Sammak, Amir; Vandersypen, Lieven M. K.; Russ, Maximilian; Scappucci, Giordano. Reducing charge noise in quantum dots by using thin silicon quantum wells. https://doi.org/10.1038/s41467-023-36951-w. http://hdl.handle.net/10261/336778
https://doi.org/10.1038/s41467-023-36951-w
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Nature Publishing Group
publisher.none.fl_str_mv Nature Publishing Group
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,811543

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