Supplementary Information: Reducing charge noise in quantum dots by using thin silicon quantum wells

10 pages. -- Contents: Measurement of the thickness of the quantum wells. -- Charge noise measurements. -- Noise spectra for a quantum dot from heterostructure C 5. -- Frequency and gate voltage dependence of noise spectra. -- Operation gate voltages for charge sensor quantum dots. -- 6. Lever arm e...

Descripción completa

Detalles Bibliográficos
Autores: Paquelet Wuetz, Brian, Degli Esposti, Davide, Zwerver, Anne-Marije J., Amitonov, Sergey V., Botifoll, Marc, Arbiol, Jordi, Sammak, Amir, Vandersypen, Lieven M. K., Russ, Maximilian, Scappucci, Giordano
Tipo de recurso: conjunto de datos
Fecha de publicación:2023
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/337338
Acceso en línea:http://hdl.handle.net/10261/337338
Access Level:acceso abierto
Descripción
Sumario:10 pages. -- Contents: Measurement of the thickness of the quantum wells. -- Charge noise measurements. -- Noise spectra for a quantum dot from heterostructure C 5. -- Frequency and gate voltage dependence of noise spectra. -- Operation gate voltages for charge sensor quantum dots. -- 6. Lever arm extraction. -- 7. Simulations of dephasing times and gate fidelities. -- Dephasing of charge qubit. -- Dephasing of spin qubit. -- Gate fidelity simulations. -- References

Similares en LA Referencia