Localization and electrical characterization of interconnect open defects

A technique for extracting the electrical and topological parameters of open defects in process monitor lines is presented. The procedure is based on frequency-domain measurements performed at both end points of the line. The location as well as the resistive value of the open defect are derived fro...

Descripción completa

Detalles Bibliográficos
Autores: Rodríguez Montañés, Rosa|||0000-0001-6231-0862, Arumi Delgado, Daniel|||0000-0002-6638-7485, Figueras Pàmies, Joan, Beverloo, Willem, Vries, Dirk K. de, Eichenberger, Stefan, Volf, Paul A. J.
Tipo de recurso: artículo
Fecha de publicación:2010
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/7803
Acceso en línea:https://hdl.handle.net/2117/7803
Access Level:acceso abierto
Palabra clave:Integrated circuits
Metal oxide semiconductors, Complementary
Circuits integrats
Metall òxid semiconductors complementaris
Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics
id ES_aa53695b6038ed88f03c3a70bfb9a237
oai_identifier_str oai:upcommons.upc.edu:2117/7803
network_acronym_str ES
network_name_str España
repository_id_str
spelling Localization and electrical characterization of interconnect open defectsRodríguez Montañés, Rosa|||0000-0001-6231-0862Arumi Delgado, Daniel|||0000-0002-6638-7485Figueras Pàmies, JoanBeverloo, WillemVries, Dirk K. deEichenberger, StefanVolf, Paul A. J.Integrated circuitsMetal oxide semiconductors, ComplementaryCircuits integratsMetall òxid semiconductors complementarisÀrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònicsA technique for extracting the electrical and topological parameters of open defects in process monitor lines is presented. The procedure is based on frequency-domain measurements performed at both end points of the line. The location as well as the resistive value of the open defect are derived from attenuation and phase shift measurements. The characteristic defect-free impedance of the line and its propagation constant are considered to be unknowns, and their values are also derived from the above measurements. In this way, the impact of process parameter variations on the proposed model is diminished. The experimental setup required to perform the characterization measurements and a simple graphical procedure to determine the defect and line parameters are presented. Experimental results show a good agreement between the predicted location of the open and its real location, found by optical beam induced resistance change inspection. Errors smaller than 2% of the total length of the line have been observed in the experiments.20102010-02-0120102010-06-22journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/2117/7803reponame:UPCommons. Portal del coneixement obert de la UPCinstname:Universitat Politècnica de Catalunya (UPC)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:upcommons.upc.edu:2117/78032026-05-27T15:37:01Z
dc.title.none.fl_str_mv Localization and electrical characterization of interconnect open defects
title Localization and electrical characterization of interconnect open defects
spellingShingle Localization and electrical characterization of interconnect open defects
Rodríguez Montañés, Rosa|||0000-0001-6231-0862
Integrated circuits
Metal oxide semiconductors, Complementary
Circuits integrats
Metall òxid semiconductors complementaris
Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics
title_short Localization and electrical characterization of interconnect open defects
title_full Localization and electrical characterization of interconnect open defects
title_fullStr Localization and electrical characterization of interconnect open defects
title_full_unstemmed Localization and electrical characterization of interconnect open defects
title_sort Localization and electrical characterization of interconnect open defects
dc.creator.none.fl_str_mv Rodríguez Montañés, Rosa|||0000-0001-6231-0862
Arumi Delgado, Daniel|||0000-0002-6638-7485
Figueras Pàmies, Joan
Beverloo, Willem
Vries, Dirk K. de
Eichenberger, Stefan
Volf, Paul A. J.
author Rodríguez Montañés, Rosa|||0000-0001-6231-0862
author_facet Rodríguez Montañés, Rosa|||0000-0001-6231-0862
Arumi Delgado, Daniel|||0000-0002-6638-7485
Figueras Pàmies, Joan
Beverloo, Willem
Vries, Dirk K. de
Eichenberger, Stefan
Volf, Paul A. J.
author_role author
author2 Arumi Delgado, Daniel|||0000-0002-6638-7485
Figueras Pàmies, Joan
Beverloo, Willem
Vries, Dirk K. de
Eichenberger, Stefan
Volf, Paul A. J.
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Integrated circuits
Metal oxide semiconductors, Complementary
Circuits integrats
Metall òxid semiconductors complementaris
Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics
topic Integrated circuits
Metal oxide semiconductors, Complementary
Circuits integrats
Metall òxid semiconductors complementaris
Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics
description A technique for extracting the electrical and topological parameters of open defects in process monitor lines is presented. The procedure is based on frequency-domain measurements performed at both end points of the line. The location as well as the resistive value of the open defect are derived from attenuation and phase shift measurements. The characteristic defect-free impedance of the line and its propagation constant are considered to be unknowns, and their values are also derived from the above measurements. In this way, the impact of process parameter variations on the proposed model is diminished. The experimental setup required to perform the characterization measurements and a simple graphical procedure to determine the defect and line parameters are presented. Experimental results show a good agreement between the predicted location of the open and its real location, found by optical beam induced resistance change inspection. Errors smaller than 2% of the total length of the line have been observed in the experiments.
publishDate 2010
dc.date.none.fl_str_mv 2010
2010-02-01
2010
2010-06-22
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/2117/7803
url https://hdl.handle.net/2117/7803
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:UPCommons. Portal del coneixement obert de la UPC
instname:Universitat Politècnica de Catalunya (UPC)
instname_str Universitat Politècnica de Catalunya (UPC)
reponame_str UPCommons. Portal del coneixement obert de la UPC
collection UPCommons. Portal del coneixement obert de la UPC
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869416153653182464
score 15.301603

Similares en LA Referencia