Lithography guided horizontal growth of silicon nanowires for the fabrication of ultrasensitive piezoresistive strain gauges
We present a fabrication process to obtain ultrasensitive piezoresistive strain gauges that exploit the exceptional mechanical and piezoresistive properties of silicon nanowires grown via the vapour-liquid-solid mechanism. The process allows the implementation of nanowire-based strain gauges in micr...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2010 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/378323 |
| Acceso en línea: | http://hdl.handle.net/10261/378323 https://api.elsevier.com/content/abstract/scopus_id/76949096154 |
| Access Level: | acceso abierto |
| Palabra clave: | MEMS | Nanomechanical cantilever sensors | NEMS | Silicon nanowires http://metadata.un.org/sdg/3 Ensure healthy lives and promote well-being for all at all ages |
| Sumario: | We present a fabrication process to obtain ultrasensitive piezoresistive strain gauges that exploit the exceptional mechanical and piezoresistive properties of silicon nanowires grown via the vapour-liquid-solid mechanism. The process allows the implementation of nanowire-based strain gauges in micro and nanoelectromechanical systems, which is demonstrated here for piezoresistive cantilever sensors. The main feature of this process is that it allows the location of a nanowire array only at one side of the neutral axis of the mechanically active area of the device. This is a crucial requirement to achieve that only tensile or compressive stresses occur in the array, so that a detectable change in resistance is produced. Atomic force microscopy characterization of the sensitivity of the obtained devices validates the fabrication process. © 2009 Elsevier B.V. All rights reserved. |
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