Modification of the gate electrode by self-assembled monolayers in flexible electrolyte-gated organic field effect transistors: work function vs. capacitance effects

Understanding the physics behind the operational mechanism of Electrolyte-Gated Organic Field-Effect Transistors (EGOFETs) is of paramount importance for the correct interpretation of the device response. Here, we report the systematic functionalization of the gate electrode of an EGOFET with self-a...

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Autores: Leonardi, Francesca, Tamayo, Adrián, Casalini, Stefano, Mas Torrent, Marta
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2018
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/190293
Acceso en línea:http://hdl.handle.net/10261/190293
Access Level:acceso abierto
Palabra clave:Thin-film transistors
Polymer
Voltage
Charge
Layers
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spelling Modification of the gate electrode by self-assembled monolayers in flexible electrolyte-gated organic field effect transistors: work function vs. capacitance effectsLeonardi, FrancescaTamayo, AdriánCasalini, StefanoMas Torrent, MartaThin-film transistorsPolymerVoltageChargeLayersUnderstanding the physics behind the operational mechanism of Electrolyte-Gated Organic Field-Effect Transistors (EGOFETs) is of paramount importance for the correct interpretation of the device response. Here, we report the systematic functionalization of the gate electrode of an EGOFET with self-assembled monolayers with a variety of dipolar moments showing that both the chemical nature and the monolayer density influence the electrical characteristics of the device.The authors thank the ERC StG2012-306826 e-GAMES project, the Networking Research Center on Bioengineering, Biomaterials and Nanomedicine (CIBER-BBN), the DGI (Spain) project FANCY CTQ2016-80030-R, the Generalitat de Catalunya (2017-SGR-918), and the Spanish Ministry of Economy and Competitiveness, through the “Severo Ochoa” programme for Centres of Excellence in R&D (SEV-2015-0496). F. L. gratefully acknowledges the “Juan de la Cierva” programme. The research leading to these results has received funding from the People Programme (Marie Curie Actions) of the Seventh Framework Programme of the European Union (FP7/2007-2013) under Research Executive Agency Grant Agreement No. 600388 (TECNIOSpring programme), and from the Agency for Business Competitiveness of the Government of Catalonia, ACCIÓ. A. T. is enrolled in the UAB PhD program and he thanks the Spanish Ministry for a FPU fellowship.Peer reviewedRoyal Society of Chemistry (UK)European Research CouncilCentro de Investigación Biomédica en Red Bioingeniería, Biomateriales y Nanomedicina (España)Dirección General de Investigación Científica y Técnica, DGICT (España)Generalitat de CatalunyaMinisterio de Economía y Competitividad (España)European CommissionConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]201920192018info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/190293reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/EC/FP7/306826info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/CTQ2016-80030-Rinfo:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496info:eu-repo/grantAgreement/EC/FP7/600388http://dx.doi.org/10.1039/C8RA05300FSíinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/1902932026-05-22T06:33:51Z
dc.title.none.fl_str_mv Modification of the gate electrode by self-assembled monolayers in flexible electrolyte-gated organic field effect transistors: work function vs. capacitance effects
title Modification of the gate electrode by self-assembled monolayers in flexible electrolyte-gated organic field effect transistors: work function vs. capacitance effects
spellingShingle Modification of the gate electrode by self-assembled monolayers in flexible electrolyte-gated organic field effect transistors: work function vs. capacitance effects
Leonardi, Francesca
Thin-film transistors
Polymer
Voltage
Charge
Layers
title_short Modification of the gate electrode by self-assembled monolayers in flexible electrolyte-gated organic field effect transistors: work function vs. capacitance effects
title_full Modification of the gate electrode by self-assembled monolayers in flexible electrolyte-gated organic field effect transistors: work function vs. capacitance effects
title_fullStr Modification of the gate electrode by self-assembled monolayers in flexible electrolyte-gated organic field effect transistors: work function vs. capacitance effects
title_full_unstemmed Modification of the gate electrode by self-assembled monolayers in flexible electrolyte-gated organic field effect transistors: work function vs. capacitance effects
title_sort Modification of the gate electrode by self-assembled monolayers in flexible electrolyte-gated organic field effect transistors: work function vs. capacitance effects
dc.creator.none.fl_str_mv Leonardi, Francesca
Tamayo, Adrián
Casalini, Stefano
Mas Torrent, Marta
author Leonardi, Francesca
author_facet Leonardi, Francesca
Tamayo, Adrián
Casalini, Stefano
Mas Torrent, Marta
author_role author
author2 Tamayo, Adrián
Casalini, Stefano
Mas Torrent, Marta
author2_role author
author
author
dc.contributor.none.fl_str_mv European Research Council
Centro de Investigación Biomédica en Red Bioingeniería, Biomateriales y Nanomedicina (España)
Dirección General de Investigación Científica y Técnica, DGICT (España)
Generalitat de Catalunya
Ministerio de Economía y Competitividad (España)
European Commission
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Thin-film transistors
Polymer
Voltage
Charge
Layers
topic Thin-film transistors
Polymer
Voltage
Charge
Layers
description Understanding the physics behind the operational mechanism of Electrolyte-Gated Organic Field-Effect Transistors (EGOFETs) is of paramount importance for the correct interpretation of the device response. Here, we report the systematic functionalization of the gate electrode of an EGOFET with self-assembled monolayers with a variety of dipolar moments showing that both the chemical nature and the monolayer density influence the electrical characteristics of the device.
publishDate 2018
dc.date.none.fl_str_mv 2018
2019
2019
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/190293
url http://hdl.handle.net/10261/190293
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/EC/FP7/306826
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/CTQ2016-80030-R
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496
info:eu-repo/grantAgreement/EC/FP7/600388
http://dx.doi.org/10.1039/C8RA05300F

dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Royal Society of Chemistry (UK)
publisher.none.fl_str_mv Royal Society of Chemistry (UK)
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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