Real-time threshold voltage compensation on dual-gate electrolyte-gated organic field-effect transistors

Electrolyte-Gated Organic Field-Effect Transistors (EGOFETs) offer many opportunities for the development of low-cost and low-power electronics suitable for applications like sensors and point-of-care tests; however, EGOFETs can be affected by the drift of their operative point that causes signals d...

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Detalles Bibliográficos
Autores: Lago, Nicolò|||0000-0001-7309-6697, Buonomo, Marco|||0000-0001-7339-1549, Ruiz Molina, Sara|||0000-0002-8792-4411, Pollesel, Andrea|||0000-0002-8623-3213, Hensel, Rafael C.|||0000-0001-7060-6604, Sedona, Francesco|||0000-0002-7225-9498, Sambi, Mauro|||0000-0002-7105-4001, Mas-Torrent, Marta|||0000-0002-1586-005X, Casalini, Stefano|||0000-0003-3609-1154, Cester, Andrea|||0000-0001-6583-1735
Tipo de recurso: artículo
Fecha de publicación:2022
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:302024
Acceso en línea:https://ddd.uab.cat/record/302024
https://dx.doi.org/urn:doi:10.1016/j.orgel.2022.106531
Access Level:acceso abierto
Palabra clave:Organic electronics
Electrolyte-gated organic field-effect transistors
Dual-gate
EGOFETs
Electrolyte gating
Threshold voltage compensation
Descripción
Sumario:Electrolyte-Gated Organic Field-Effect Transistors (EGOFETs) offer many opportunities for the development of low-cost and low-power electronics suitable for applications like sensors and point-of-care tests; however, EGOFETs can be affected by the drift of their operative point that causes signals distortion and loss of information during sensing applications. Here, a blend of 2,8-Difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT) and polystyrene (PS) is used as the active material for the fabrication of dual-gate EGOFETs. We exploited the dual-gate architecture to improve EGOFETs stability by implementing digital feedback that uses the back-gate electrode to compensate dynamically for the transistor threshold voltage allowing us to fix its operative point for prolonged tests (>10 h) with different aqueous solutions (Milli-Q water, NaCl 0.1 M and a physiological solution). The presented real-time threshold voltage compensation does not only allow to steady EGOFETs DC output current, but it also preserves EGOFETs sensing capability for the detection of signals with frequencies as low as 1 Hz.

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