Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions

The recent discovery of ferroelectricity in doped HfO2 has opened perspectives on the development of memristors based on ferroelectric switching, including ferroelectric tunnel junctions. In these devices, conductive channels are formed in a similar manner to junctions based on nonferroelectric oxid...

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Autores: Long, Xiao, Tan, Huan, Sánchez Barrera, Florencio, Fina, Ignasi, Fontcuberta, Josep
Tipo de documento: artigo
Estado:Versão publicada
Data de publicação:2023
País:España
Recursos:Consejo Superior de Investigaciones Científicas (CSIC)
Repositório:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/330980
Acesso em linha:http://hdl.handle.net/10261/330980
https://api.elsevier.com/content/abstract/scopus_id/85147690523
Access Level:Acceso aberto
Palavra-chave:Epitaxial HfO 2
Ferroelectric
Ferroelectric hafnium oxide
Ferroelectric tunnel junction
Resistive switching
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spelling Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf0.5Zr0.5O2 Tunnel JunctionsLong, XiaoTan, HuanSánchez Barrera, FlorencioFina, IgnasiFontcuberta, JosepEpitaxial HfO 2FerroelectricFerroelectric hafnium oxideFerroelectric tunnel junctionResistive switchingThe recent discovery of ferroelectricity in doped HfO2 has opened perspectives on the development of memristors based on ferroelectric switching, including ferroelectric tunnel junctions. In these devices, conductive channels are formed in a similar manner to junctions based on nonferroelectric oxides. The formation of the conductive channels does not preclude the presence of ferroelectric switching, but little is known about the device ferroelectric properties after conduction path formation or their impact on the electric modulation of the resistance state. Here, we show that ferroelectricity and related sizable electroresistance are observed in pristine 4.6 nm epitaxial Hf0.5Zr0.5O2 (HZO) tunnel junctions grown on Si. After a soft breakdown induced by the application of suitable voltage, the resistance decreases by about five orders of magnitude, but signatures of ferroelectricity and electroresistance are still observed. Impedance spectroscopy allows us to conclude that the effective ferroelectric device area after the breakdown is reduced, most likely by the formation of conducting paths at the edge.Financial support from the Spanish Ministry of Science and Innovation (10.13039/501100011033) through the Severo Ochoa FUNFUTURE (No. CEX2019-000917-S); the TED2021-130453B-C21 (AEI/FEDER, EU), PID2020-118479RB-I00 (AEI/FEDER, EU), PID2020-112548RB-I00 (AEI/FEDER, EU), and PID2019-107727RB-I00 (AEI/FEDER, EU) projects; from Generalitat de Catalunya through 2021 SGR 00445 and 2021 SGR 00804 projects; and from CSIC through the i-LINK (No. LINKA20338) program is acknowledged. X.L. and H.T. are financially supported by the China Scholarship Council (CSC) through No. 201806100207 and 201906050014. The work of X.L. and H.T. has been done as part of their Ph.D. program in Materials Science at Universitat Autònoma de Barcelona.With funding from the Spanish government through the ‘Severo Ochoa Centre of Excellence’ accreditation (CEX2019-000917-S).Peer reviewedAmerican Chemical SocietyMinisterio de Ciencia, Innovación y Universidades (España)Agencia Estatal de Investigación (España)Generalitat de CatalunyaConsejo Superior de Investigaciones Científicas (España)China Scholarship CouncilMinisterio de Ciencia e Innovación (España)Long, Xiao [0000-0002-3619-1318]Sánchez Barrera, Florencio [0000-0002-5314-453X]Fina, Ignasi [0000-0003-4182-6194]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202320232023info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/330980https://api.elsevier.com/content/abstract/scopus_id/85147690523reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/AEI/Plan Estatal de investigación Científica y Técnica y de Innovación 2017-2020/CEX2019-000917-Sinfo:eu-repo/grantAgreement/AEI//TED2021-130453B-C21info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-118479RB-I00info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-112548RB-I00info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2019-107727RB-I00ACS applied electronic materialshttp://doi.org/10.1021/acsaelm.2c01186Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3309802026-05-22T06:33:51Z
dc.title.none.fl_str_mv Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions
title Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions
spellingShingle Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions
Long, Xiao
Epitaxial HfO 2
Ferroelectric
Ferroelectric hafnium oxide
Ferroelectric tunnel junction
Resistive switching
title_short Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions
title_full Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions
title_fullStr Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions
title_full_unstemmed Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions
title_sort Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions
dc.creator.none.fl_str_mv Long, Xiao
Tan, Huan
Sánchez Barrera, Florencio
Fina, Ignasi
Fontcuberta, Josep
author Long, Xiao
author_facet Long, Xiao
Tan, Huan
Sánchez Barrera, Florencio
Fina, Ignasi
Fontcuberta, Josep
author_role author
author2 Tan, Huan
Sánchez Barrera, Florencio
Fina, Ignasi
Fontcuberta, Josep
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Ministerio de Ciencia, Innovación y Universidades (España)
Agencia Estatal de Investigación (España)
Generalitat de Catalunya
Consejo Superior de Investigaciones Científicas (España)
China Scholarship Council
Ministerio de Ciencia e Innovación (España)
Long, Xiao [0000-0002-3619-1318]
Sánchez Barrera, Florencio [0000-0002-5314-453X]
Fina, Ignasi [0000-0003-4182-6194]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Epitaxial HfO 2
Ferroelectric
Ferroelectric hafnium oxide
Ferroelectric tunnel junction
Resistive switching
topic Epitaxial HfO 2
Ferroelectric
Ferroelectric hafnium oxide
Ferroelectric tunnel junction
Resistive switching
description The recent discovery of ferroelectricity in doped HfO2 has opened perspectives on the development of memristors based on ferroelectric switching, including ferroelectric tunnel junctions. In these devices, conductive channels are formed in a similar manner to junctions based on nonferroelectric oxides. The formation of the conductive channels does not preclude the presence of ferroelectric switching, but little is known about the device ferroelectric properties after conduction path formation or their impact on the electric modulation of the resistance state. Here, we show that ferroelectricity and related sizable electroresistance are observed in pristine 4.6 nm epitaxial Hf0.5Zr0.5O2 (HZO) tunnel junctions grown on Si. After a soft breakdown induced by the application of suitable voltage, the resistance decreases by about five orders of magnitude, but signatures of ferroelectricity and electroresistance are still observed. Impedance spectroscopy allows us to conclude that the effective ferroelectric device area after the breakdown is reduced, most likely by the formation of conducting paths at the edge.
publishDate 2023
dc.date.none.fl_str_mv 2023
2023
2023
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/330980
https://api.elsevier.com/content/abstract/scopus_id/85147690523
url http://hdl.handle.net/10261/330980
https://api.elsevier.com/content/abstract/scopus_id/85147690523
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
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info:eu-repo/grantAgreement/AEI/Plan Estatal de investigación Científica y Técnica y de Innovación 2017-2020/CEX2019-000917-S
info:eu-repo/grantAgreement/AEI//TED2021-130453B-C21
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-118479RB-I00
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-112548RB-I00
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2019-107727RB-I00
ACS applied electronic materials
http://doi.org/10.1021/acsaelm.2c01186
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Chemical Society
publisher.none.fl_str_mv American Chemical Society
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
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