Dual Ferroelectric Polarization and Dielectric Response Improvement in Epitaxial Hf0.5Zr0.5O2/HfO2 Nanolaminates

Nanolaminates based on ferroelectric polycrystalline doped HfO2 have gained interest because those compounds show enhanced functional properties. Here, we achieve coexisting improvement of remanent polarization and dielectric permittivity in wake-up-free epitaxial Hf0.5Zr0.5O2/HfO2 nanolaminates wit...

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Detalles Bibliográficos
Autores: Ghiasabadi Farahani, Mehrdad, Quintana, Alberto, Song, Tingfeng, Kumar, Rohit, Rubano, Andrea, Ali, Faizan, Sánchez Barrera, Florencio, Fina, Ignasi
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2025
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:dnet:digitalcsic_::6488dcb36037dc4ca1e5077efd7eff36
Acceso en línea:http://hdl.handle.net/10261/430576
https://api.elsevier.com/content/abstract/scopus_id/85216036200
Access Level:acceso abierto
Palabra clave:Hf0.5Zr0.5O2
HfO2
Epitaxy
Ferroelectric
Hafnium oxide
Nanolaminate
Descripción
Sumario:Nanolaminates based on ferroelectric polycrystalline doped HfO2 have gained interest because those compounds show enhanced functional properties. Here, we achieve coexisting improvement of remanent polarization and dielectric permittivity in wake-up-free epitaxial Hf0.5Zr0.5O2/HfO2 nanolaminates with different numbers of HfO2 nanolayers if compared with Hf0.5Zr0.5O2 single films of equivalent thickness or other reported polycrystalline nanolaminates. Comprehensive structural characterization reveals that the origin of the enhancement must be the larger amount of the orthorhombic phase in the nanolaminates. The retention of nanolaminates is greater than that of Hf0.5Zr0.5O2 single films; however, fatigue is larger and ferroelectric switching is slower in the nanolaminates compared with single layers. The present work reveals nanolamination in high-quality films as a strategy to increase dielectric permittivity without important degradation of other functional properties.