A simple, robust, and accurate compact model for a wide variety of complementary resistive switching devices
Complementary Resistive Switching (CRS) using memristive devices has been intensively investigated in the last decade. The objective of CRS is to generate low and high resistance windows in the I-V characteristic of the selector device with the aim of reducing the sneak-path conduction problem in cr...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2021 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:249235 |
| Acceso en línea: | https://ddd.uab.cat/record/249235 https://dx.doi.org/urn:doi:10.1016/j.sse.2021.108083 |
| Access Level: | acceso abierto |
| Palabra clave: | Complementary Resistive Switching Memristor Memdiode Snapback Snapforward |
| Sumario: | Complementary Resistive Switching (CRS) using memristive devices has been intensively investigated in the last decade. The objective of CRS is to generate low and high resistance windows in the I-V characteristic of the selector device with the aim of reducing the sneak-path conduction problem in crossbar arrays. Though a wide variety of compact models for CRS have been proposed, the one presented here stands out for its simplicity, robustness, and accuracy. The flexibility of the memdiode model is demonstrated through a series of fitting exercises using experimental data found in the literature. The model script for the LTSpice XVII simulator is also provided. |
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