5GHz CMOS all–pass filter–based true time delay cell

Analog CMOS time-delay cells realized by passive components, e.g., lumped LC delay lines, are inefficient in terms of area for multi-GHz frequencies. All-pass filters considered as active circuits can, therefore, be the best candidates to approximate time delays. This paper proposes a broadband firs...

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Detalles Bibliográficos
Autores: Aghazadeh Dafsari, Seyed Rasoul, Martínez García, Herminio|||0000-0002-7977-2577, Saberkari, Alireza
Tipo de recurso: artículo
Fecha de publicación:2018
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/177784
Acceso en línea:https://hdl.handle.net/2117/177784
https://dx.doi.org/10.3390/electronics8010016
Access Level:acceso abierto
Palabra clave:Metal oxide semiconductors, Complementary
Digital electronics
All-pass filter
CMOS
Time delay
Broadband
True-time-delay
Metall-òxid-semiconductors complementaris
Electrònica digital
Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
Descripción
Sumario:Analog CMOS time-delay cells realized by passive components, e.g., lumped LC delay lines, are inefficient in terms of area for multi-GHz frequencies. All-pass filters considered as active circuits can, therefore, be the best candidates to approximate time delays. This paper proposes a broadband first-order voltage-mode all-pass filter as a true-time-delay cell. The proposed true-time-delay cell is capable of tuning delay, demonstrating its potential capability to be used in different systems, e.g., RF beam-formers. The proposed filter achieves a flat group delay of over 60 ps with a pole/zero pair located at 5 GHz. This proposed circuit consumes only 10 mW power from a 1.8-V supply. To demonstrate the performance of the proposed all-pass filter, simulation results are conducted by using Virtuoso Cadence in a standard TSMC 180-nm CMOS process.