Experimental verification of memristor-based material implication NAND operation
Memristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more specific and differential logic functions is the material implication logic also...
| Autores: | , , , , , , , |
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| Formato: | artículo |
| Fecha de publicación: | 2019 |
| País: | España |
| Recursos: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:249152 |
| Acesso em linha: | https://ddd.uab.cat/record/249152 https://dx.doi.org/urn:doi:10.1109/TETC.2017.2760929 |
| Access Level: | acceso abierto |
| Palavra-chave: | IMPLY function Material implication Memristive circuits Memristors NAND gate implementation Resistive switching |
| Resumo: | Memristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more specific and differential logic functions is the material implication logic also named as IMPLY logic. Many papers have been published in this framework but few of them are related with experimental works using real memristor devices. In the paper authors show the verification of the IMPLY function by using Ni/HfO2/Si manufactured devices and laboratory measurements. The proper behavior of the IMPLY structure (2 memristors) has been shown. The paper also verifies the proper operation of a two-step IMPLY-based NAND gate implementation, showing the electrical behavior of the circuit in a cycling operation. A new procedure to implement a NAND gate that requires only one step is experimentally shown as well. |
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