Comprehensive statistical analysis of random telegraph noise

This work presents a statistical analysis of Random Telegraph Noise (RTN) in nanoscale MOSFETs, from more than 13,000 traces measured under varying voltages, temperatures, and bias times on an array-based characterization chip. Using the Weighted Time Lag Plot (WTLP), we extracted the average number...

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Detalles Bibliográficos
Autores: Martin Martinez, Javier|||0000-0001-5938-5898, Baghban Bousari, Nazanin|||0000-0001-8703-9327, Castro-Lopez, Rafael|||0000-0002-6247-3124, Eric, Deborah|||0000-0002-5780-2579, Roca, Elisenda|||0000-0001-6260-6495, Rodríguez Martínez, Rosana|||0000-0002-4565-6703, Porti i Pujal, Marc|||0000-0001-7438-3823, Fernandez, Francisco V.|||0000-0001-8682-2280, Nafria, Montserrat|||0000-0002-9549-2890
Tipo de recurso: artículo
Fecha de publicación:2026
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:324630
Acceso en línea:https://ddd.uab.cat/record/324630
https://dx.doi.org/urn:doi:10.1016/j.mee.2025.112437
Access Level:acceso embargado
Palabra clave:CMOS
Random telegraph noise
Reliability
Variability
Descripción
Sumario:This work presents a statistical analysis of Random Telegraph Noise (RTN) in nanoscale MOSFETs, from more than 13,000 traces measured under varying voltages, temperatures, and bias times on an array-based characterization chip. Using the Weighted Time Lag Plot (WTLP), we extracted the average number of detectable traps and the associated current step amplitudes. Results show that the average number of detectable traps increases with voltage and temperature but decreases after some bias time due to a transient trap population. The average current step amplitude grows with voltage and shows negligible dependence on temperature. These findings support improved RTN modeling and are relevant for both reliability analysis and cryptographic applications.

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