Schottky barriers, emission regimes and contact resistances in 2H-1T' MoS2 lateral metal-semiconductor junctions from first-principles

We have studied the finite bias transport properties of a 2H-1T' MoS2 lateral metal-semiconductor (M-S) junction by non-equilibrium Green's functions calculations, aimed at contacting the 2D channel in a field effect transistor. Our results indicate that (a) despite the fundamentally diffe...

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Detalles Bibliográficos
Autores: Urquiza, Laura, Cartoixà, Xavier|||0000-0003-1905-5979
Tipo de recurso: artículo
Fecha de publicación:2020
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:292615
Acceso en línea:https://ddd.uab.cat/record/292615
https://dx.doi.org/urn:doi:10.1088/2053-1583/aba449
Access Level:acceso abierto
Palabra clave:Contact resistance
DFT
Lateral 2H-1T' junction
MoS2
NEGF
Schottky barrier
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spelling Schottky barriers, emission regimes and contact resistances in 2H-1T' MoS2 lateral metal-semiconductor junctions from first-principlesUrquiza, LauraCartoixà, Xavier|||0000-0003-1905-5979Contact resistanceDFTLateral 2H-1T' junctionMoS2NEGFSchottky barrierWe have studied the finite bias transport properties of a 2H-1T' MoS2 lateral metal-semiconductor (M-S) junction by non-equilibrium Green's functions calculations, aimed at contacting the 2D channel in a field effect transistor. Our results indicate that (a) despite the fundamentally different electrostatics of line and planar dipoles, the Schottky barrier heights respond similarly to changes in doping and applied bias in 2D and 3D M-S junctions, (b) 2H-1T' MoS2 lateral junctions are free from Fermi level pinning, (c) armchair interfaces have superior contacting properties vs. zigzag interfaces, (d) 1T' contacts to p channels will present a reduced contact resistance by a factor of 4-10 with respect to n channels and (e) contacts to intermediately doped n (p) channels operate in the field (thermionic) emission regime. We also provide an improved procedure to experimentally determine the emission regime in 2D material junctions. 22020-01-0120202020-01-01Articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/292615https://dx.doi.org/urn:doi:10.1088/2053-1583/aba449reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2015-67462-C2-1-RAgencia Estatal de Investigación https://doi.org/10.13039/501100011033 RTI2018-097876-B-C21European Commission https://doi.org/10.13039/501100000780 785219European Commission https://doi.org/10.13039/501100000780 881603open accesshttp://purl.org/coar/access_right/c_abf2Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.https://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2926152026-06-06T12:50:31Z
dc.title.none.fl_str_mv Schottky barriers, emission regimes and contact resistances in 2H-1T' MoS2 lateral metal-semiconductor junctions from first-principles
title Schottky barriers, emission regimes and contact resistances in 2H-1T' MoS2 lateral metal-semiconductor junctions from first-principles
spellingShingle Schottky barriers, emission regimes and contact resistances in 2H-1T' MoS2 lateral metal-semiconductor junctions from first-principles
Urquiza, Laura
Contact resistance
DFT
Lateral 2H-1T' junction
MoS2
NEGF
Schottky barrier
title_short Schottky barriers, emission regimes and contact resistances in 2H-1T' MoS2 lateral metal-semiconductor junctions from first-principles
title_full Schottky barriers, emission regimes and contact resistances in 2H-1T' MoS2 lateral metal-semiconductor junctions from first-principles
title_fullStr Schottky barriers, emission regimes and contact resistances in 2H-1T' MoS2 lateral metal-semiconductor junctions from first-principles
title_full_unstemmed Schottky barriers, emission regimes and contact resistances in 2H-1T' MoS2 lateral metal-semiconductor junctions from first-principles
title_sort Schottky barriers, emission regimes and contact resistances in 2H-1T' MoS2 lateral metal-semiconductor junctions from first-principles
dc.creator.none.fl_str_mv Urquiza, Laura
Cartoixà, Xavier|||0000-0003-1905-5979
author Urquiza, Laura
author_facet Urquiza, Laura
Cartoixà, Xavier|||0000-0003-1905-5979
author_role author
author2 Cartoixà, Xavier|||0000-0003-1905-5979
author2_role author
dc.subject.none.fl_str_mv Contact resistance
DFT
Lateral 2H-1T' junction
MoS2
NEGF
Schottky barrier
topic Contact resistance
DFT
Lateral 2H-1T' junction
MoS2
NEGF
Schottky barrier
description We have studied the finite bias transport properties of a 2H-1T' MoS2 lateral metal-semiconductor (M-S) junction by non-equilibrium Green's functions calculations, aimed at contacting the 2D channel in a field effect transistor. Our results indicate that (a) despite the fundamentally different electrostatics of line and planar dipoles, the Schottky barrier heights respond similarly to changes in doping and applied bias in 2D and 3D M-S junctions, (b) 2H-1T' MoS2 lateral junctions are free from Fermi level pinning, (c) armchair interfaces have superior contacting properties vs. zigzag interfaces, (d) 1T' contacts to p channels will present a reduced contact resistance by a factor of 4-10 with respect to n channels and (e) contacts to intermediately doped n (p) channels operate in the field (thermionic) emission regime. We also provide an improved procedure to experimentally determine the emission regime in 2D material junctions.
publishDate 2020
dc.date.none.fl_str_mv 2
2020-01-01
2020
2020-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/292615
https://dx.doi.org/urn:doi:10.1088/2053-1583/aba449
url https://ddd.uab.cat/record/292615
https://dx.doi.org/urn:doi:10.1088/2053-1583/aba449
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2015-67462-C2-1-R
Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 RTI2018-097876-B-C21
European Commission https://doi.org/10.13039/501100000780 785219
European Commission https://doi.org/10.13039/501100000780 881603
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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