Gate-tunable atomically thin lateral MoS2 Schottky junction patterned by electron beam
Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-do...
| Authors: | , , , , , , , , , , , |
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| Format: | article |
| Publication Date: | 2016 |
| Country: | España |
| Institution: | Universitat Autònoma de Barcelona |
| Repository: | Dipòsit Digital de Documents de la UAB |
| Language: | English |
| OAI Identifier: | oai:ddd.uab.cat:241018 |
| Online Access: | https://ddd.uab.cat/record/241018 https://dx.doi.org/urn:doi:10.1021/acs.nanolett.6b01186 |
| Access Level: | Open access |
| Keyword: | Atomically thin layers Schottky junction Semiconductor-metal transition Electron-beam irradiation 1T phase |
| Summary: | Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS Schottky barrier (SB) junction with barrier height of 0.13-0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers. |
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