Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers
http://link.aip.org/link/?JAPIAU/103/056108/1
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2008 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/11694 |
| Acceso en línea: | http://hdl.handle.net/10261/11694 |
| Access Level: | acceso abierto |
| Palabra clave: | Cadmium compounds Etching II-VI semiconductors Impurities Ion beam assisted deposition MOCVD Photoluminescence Sapphire Semiconductor epitaxial layers Spectral line intensity Vapour phase epitaxial growth |
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Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layersMartínez Pastor, Juan PascualFuster, DavidAbellán Rubio, María de los ÁngelesAnguita, José VirgilioSochinskii, N. V.Cadmium compoundsEtchingII-VI semiconductorsImpuritiesIon beam assisted depositionMOCVDPhotoluminescenceSapphireSemiconductor epitaxial layersSpectral line intensityVapour phase epitaxial growthhttp://link.aip.org/link/?JAPIAU/103/056108/1We demonstrated the effect of reactive ion beam etching (RIBE) process on the PL properties of CdTe/sapphire metal organic vapor phase epitaxy layers. At optimum conditions, the RIBE attack does not make significant morphological changes but it results in an increase of the concentration of acceptor impurities. This was revealed by an increase of the overall photoluminescence (PL) intensity and, simultaneously, a decrease of the PL decay time, more important on the low energy side of PL spectrum due to the recombination of carriers in acceptor pairs.This work was supported by the Spanish projects TEC-2005-05781-C03-03 and CAM SENSORCDT S-0505/MAT/0209.Peer reviewedAmerican Institute of Physics200920092008info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501296992 bytesapplication/pdfhttp://hdl.handle.net/10261/11694reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://dx.doi.org/10.1063/1.2874480info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/116942026-05-22T06:33:51Z |
| dc.title.none.fl_str_mv |
Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers |
| title |
Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers |
| spellingShingle |
Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers Martínez Pastor, Juan Pascual Cadmium compounds Etching II-VI semiconductors Impurities Ion beam assisted deposition MOCVD Photoluminescence Sapphire Semiconductor epitaxial layers Spectral line intensity Vapour phase epitaxial growth |
| title_short |
Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers |
| title_full |
Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers |
| title_fullStr |
Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers |
| title_full_unstemmed |
Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers |
| title_sort |
Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers |
| dc.creator.none.fl_str_mv |
Martínez Pastor, Juan Pascual Fuster, David Abellán Rubio, María de los Ángeles Anguita, José Virgilio Sochinskii, N. V. |
| author |
Martínez Pastor, Juan Pascual |
| author_facet |
Martínez Pastor, Juan Pascual Fuster, David Abellán Rubio, María de los Ángeles Anguita, José Virgilio Sochinskii, N. V. |
| author_role |
author |
| author2 |
Fuster, David Abellán Rubio, María de los Ángeles Anguita, José Virgilio Sochinskii, N. V. |
| author2_role |
author author author author |
| dc.subject.none.fl_str_mv |
Cadmium compounds Etching II-VI semiconductors Impurities Ion beam assisted deposition MOCVD Photoluminescence Sapphire Semiconductor epitaxial layers Spectral line intensity Vapour phase epitaxial growth |
| topic |
Cadmium compounds Etching II-VI semiconductors Impurities Ion beam assisted deposition MOCVD Photoluminescence Sapphire Semiconductor epitaxial layers Spectral line intensity Vapour phase epitaxial growth |
| description |
http://link.aip.org/link/?JAPIAU/103/056108/1 |
| publishDate |
2008 |
| dc.date.none.fl_str_mv |
2008 2009 2009 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article http://purl.org/coar/resource_type/c_6501 |
| format |
article |
| dc.identifier.none.fl_str_mv |
http://hdl.handle.net/10261/11694 |
| url |
http://hdl.handle.net/10261/11694 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
http://dx.doi.org/10.1063/1.2874480 |
| dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
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296992 bytes application/pdf |
| dc.publisher.none.fl_str_mv |
American Institute of Physics |
| publisher.none.fl_str_mv |
American Institute of Physics |
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reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC instname:Consejo Superior de Investigaciones Científicas (CSIC) |
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Consejo Superior de Investigaciones Científicas (CSIC) |
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DIGITAL.CSIC. Repositorio Institucional del CSIC |
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DIGITAL.CSIC. Repositorio Institucional del CSIC |
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1869411705194283008 |
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15,812429 |