Thermoelectric Photosensor Based on Ultrathin Single-Crystalline Si Films †

Ultrathin Si films have a reduced thermal conductivity in comparison to Si bulk due to phonon scattering at the surfaces. Furthermore, the small thickness guarantees a reduced thermal mass (in the µJ/K range), which opens up the possibility of developing thermal sensors with a high sensitivity. Base...

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Detalhes bibliográficos
Autores: Gonçalves Dalkiranis, Gustavo, Ferrando-Villalba, Pablo, Lopeandia Fernández, Aitor, Aguiló Llobet, Jordi, Rodríguez-Viejo, Javier
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2019
País:España
Recursos:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/178963
Acesso em linha:http://hdl.handle.net/10261/178963
Access Level:acceso abierto
Palavra-chave:Photosensor
Thermoelectric effect
Microsensor
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spelling Thermoelectric Photosensor Based on Ultrathin Single-Crystalline Si Films †Gonçalves Dalkiranis, GustavoFerrando-Villalba, PabloLopeandia Fernández, AitorAguiló Llobet, JordiRodríguez-Viejo, JavierPhotosensorThermoelectric effectMicrosensorUltrathin Si films have a reduced thermal conductivity in comparison to Si bulk due to phonon scattering at the surfaces. Furthermore, the small thickness guarantees a reduced thermal mass (in the µJ/K range), which opens up the possibility of developing thermal sensors with a high sensitivity. Based on these premises, a thermoelectric (TE) microsensor based on ultrathin suspended Si films was developed and used as a thermal photosensor. The photoresponse of the device was evaluated with an argon laser (λ = 457 nm) with a variable power ranging from 0 to 10 mW in air at atmospheric pressure, with laser diodes at 406 nm, 520 nm and 638 nm wavelengths, and fixed powers in high vacuum conditions. The responsivity per unit area, response time (τ) and detectivity (D*) of the device were determined in air at ambient pressure, being 2.6 × 107 V/Wm2,~4.3 ms and 2.86 × 107 cmHz(1/2)W−1, respectively. Temperature differences up to 30 K between the central hot region and the Si frame were achieved during open-circuit voltage measurements, with and without laser diodes. During illumination, the photogeneration of carriers caused a slight reduction of the Seebeck coefficient, which did not significantly change the sensitivity of the device. Moreover, the measurements performed with light beam chopped at different frequencies evidenced the quick response of the device. The temperature gradients applied to the thermoelectric Si legs were corrected using finite element modeling (FEM) due to the non-flat temperature profile generated during the experiments.We acknowledge support by the CSIC Open Access Publication Initiative through its Unit of Information Resources for Research (URICI)Peer reviewedMultidisciplinary Digital Publishing InstituteConsejo Superior de Investigaciones Científicas (España)Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]2019201920192019info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/178963reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE#Síhttp://dx.doi.org/10.3390/s19061427Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/1789632026-05-22T06:33:51Z
dc.title.none.fl_str_mv Thermoelectric Photosensor Based on Ultrathin Single-Crystalline Si Films †
title Thermoelectric Photosensor Based on Ultrathin Single-Crystalline Si Films †
spellingShingle Thermoelectric Photosensor Based on Ultrathin Single-Crystalline Si Films †
Gonçalves Dalkiranis, Gustavo
Photosensor
Thermoelectric effect
Microsensor
title_short Thermoelectric Photosensor Based on Ultrathin Single-Crystalline Si Films †
title_full Thermoelectric Photosensor Based on Ultrathin Single-Crystalline Si Films †
title_fullStr Thermoelectric Photosensor Based on Ultrathin Single-Crystalline Si Films †
title_full_unstemmed Thermoelectric Photosensor Based on Ultrathin Single-Crystalline Si Films †
title_sort Thermoelectric Photosensor Based on Ultrathin Single-Crystalline Si Films †
dc.creator.none.fl_str_mv Gonçalves Dalkiranis, Gustavo
Ferrando-Villalba, Pablo
Lopeandia Fernández, Aitor
Aguiló Llobet, Jordi
Rodríguez-Viejo, Javier
author Gonçalves Dalkiranis, Gustavo
author_facet Gonçalves Dalkiranis, Gustavo
Ferrando-Villalba, Pablo
Lopeandia Fernández, Aitor
Aguiló Llobet, Jordi
Rodríguez-Viejo, Javier
author_role author
author2 Ferrando-Villalba, Pablo
Lopeandia Fernández, Aitor
Aguiló Llobet, Jordi
Rodríguez-Viejo, Javier
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Consejo Superior de Investigaciones Científicas (España)
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Photosensor
Thermoelectric effect
Microsensor
topic Photosensor
Thermoelectric effect
Microsensor
description Ultrathin Si films have a reduced thermal conductivity in comparison to Si bulk due to phonon scattering at the surfaces. Furthermore, the small thickness guarantees a reduced thermal mass (in the µJ/K range), which opens up the possibility of developing thermal sensors with a high sensitivity. Based on these premises, a thermoelectric (TE) microsensor based on ultrathin suspended Si films was developed and used as a thermal photosensor. The photoresponse of the device was evaluated with an argon laser (λ = 457 nm) with a variable power ranging from 0 to 10 mW in air at atmospheric pressure, with laser diodes at 406 nm, 520 nm and 638 nm wavelengths, and fixed powers in high vacuum conditions. The responsivity per unit area, response time (τ) and detectivity (D*) of the device were determined in air at ambient pressure, being 2.6 × 107 V/Wm2,~4.3 ms and 2.86 × 107 cmHz(1/2)W−1, respectively. Temperature differences up to 30 K between the central hot region and the Si frame were achieved during open-circuit voltage measurements, with and without laser diodes. During illumination, the photogeneration of carriers caused a slight reduction of the Seebeck coefficient, which did not significantly change the sensitivity of the device. Moreover, the measurements performed with light beam chopped at different frequencies evidenced the quick response of the device. The temperature gradients applied to the thermoelectric Si legs were corrected using finite element modeling (FEM) due to the non-flat temperature profile generated during the experiments.
publishDate 2019
dc.date.none.fl_str_mv 2019
2019
2019
2019
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/178963
url http://hdl.handle.net/10261/178963
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
Sí
http://dx.doi.org/10.3390/s19061427
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Multidisciplinary Digital Publishing Institute
publisher.none.fl_str_mv Multidisciplinary Digital Publishing Institute
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812455

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