Supplementary Information: Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices

New approaches such as selective area growth (SAG), where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility betwee...

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Autores: Olšteins, Dāgs, Nagda, Gunjan, Carrad, Damon J., Beznasyuk, Daria V., Petersen, Christian Emanuel N., Martí-Sànchez, Sara, Arbiol, Jordi, Jespersen, Thomas Sand
Tipo de recurso: conjunto de datos
Fecha de publicación:2024
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/384536
Acceso en línea:http://hdl.handle.net/10261/384536
Access Level:acceso abierto
Palabra clave:Transmission electron microscopy
Surface impurity scattering
Cryogenic electrical properties
Sselective area growth
Grown semiconductor nanomaterials
Quantifying statistical metrics
Fixed structural properties
Sag nanomaterials
Crystal growth
Statistical distributions
Structural parameters
Statistical reproducibility
Scale classical
Sag
Results confirm
Quantum nanoelectronics
Lithographically controlled
Individual components
Correlating measurements
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spelling Supplementary Information: Statistical Reproducibility of Selective Area Grown InAs Nanowire DevicesOlšteins, DāgsNagda, GunjanCarrad, Damon J.Beznasyuk, Daria V.Petersen, Christian Emanuel N.Martí-Sànchez, SaraArbiol, JordiJespersen, Thomas SandTransmission electron microscopySurface impurity scatteringCryogenic electrical propertiesSselective area growthGrown semiconductor nanomaterialsQuantifying statistical metricsFixed structural propertiesSag nanomaterialsCrystal growthStatistical distributionsStructural parametersStatistical reproducibilityScale classicalSagResults confirmQuantum nanoelectronicsLithographically controlledIndividual componentsCorrelating measurementsNew approaches such as selective area growth (SAG), where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of 256 individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility.Peer reviewedAmerican Chemical SocietyFigshareOlšteins, Dāgs [0000-0002-2946-7531]Carrad, Damon J. [0000-0003-0372-8593]Arbiol, Jordi [0000-0002-0695-1726]Jespersen, Thomas Sand [0000-0002-7879-976X]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202520252024info:eu-repo/semantics/datasethttp://purl.org/coar/resource_type/c_ddb1application/pdfhttp://hdl.handle.net/10261/384536reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)InglésOlšteins, Dāgs; Nagda, Gunjan; Carrad, Damon J.; Beznasyuk, Daria V.; Petersen, Christian Emanuel N.; Martí-Sànchez, Sara; Arbiol, Jordi; Jespersen, Thomas Sand. Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices. https://doi.org/10.1021/acs.nanolett.4c01038. http://hdl.handle.net/10261/381260https://doi.org/10.1021/acs.nanolett.4c01038.s001Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3845362026-05-22T06:33:51Z
dc.title.none.fl_str_mv Supplementary Information: Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
title Supplementary Information: Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
spellingShingle Supplementary Information: Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
Olšteins, Dāgs
Transmission electron microscopy
Surface impurity scattering
Cryogenic electrical properties
Sselective area growth
Grown semiconductor nanomaterials
Quantifying statistical metrics
Fixed structural properties
Sag nanomaterials
Crystal growth
Statistical distributions
Structural parameters
Statistical reproducibility
Scale classical
Sag
Results confirm
Quantum nanoelectronics
Lithographically controlled
Individual components
Correlating measurements
title_short Supplementary Information: Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
title_full Supplementary Information: Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
title_fullStr Supplementary Information: Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
title_full_unstemmed Supplementary Information: Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
title_sort Supplementary Information: Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
dc.creator.none.fl_str_mv Olšteins, Dāgs
Nagda, Gunjan
Carrad, Damon J.
Beznasyuk, Daria V.
Petersen, Christian Emanuel N.
Martí-Sànchez, Sara
Arbiol, Jordi
Jespersen, Thomas Sand
author Olšteins, Dāgs
author_facet Olšteins, Dāgs
Nagda, Gunjan
Carrad, Damon J.
Beznasyuk, Daria V.
Petersen, Christian Emanuel N.
Martí-Sànchez, Sara
Arbiol, Jordi
Jespersen, Thomas Sand
author_role author
author2 Nagda, Gunjan
Carrad, Damon J.
Beznasyuk, Daria V.
Petersen, Christian Emanuel N.
Martí-Sànchez, Sara
Arbiol, Jordi
Jespersen, Thomas Sand
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Olšteins, Dāgs [0000-0002-2946-7531]
Carrad, Damon J. [0000-0003-0372-8593]
Arbiol, Jordi [0000-0002-0695-1726]
Jespersen, Thomas Sand [0000-0002-7879-976X]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Transmission electron microscopy
Surface impurity scattering
Cryogenic electrical properties
Sselective area growth
Grown semiconductor nanomaterials
Quantifying statistical metrics
Fixed structural properties
Sag nanomaterials
Crystal growth
Statistical distributions
Structural parameters
Statistical reproducibility
Scale classical
Sag
Results confirm
Quantum nanoelectronics
Lithographically controlled
Individual components
Correlating measurements
topic Transmission electron microscopy
Surface impurity scattering
Cryogenic electrical properties
Sselective area growth
Grown semiconductor nanomaterials
Quantifying statistical metrics
Fixed structural properties
Sag nanomaterials
Crystal growth
Statistical distributions
Structural parameters
Statistical reproducibility
Scale classical
Sag
Results confirm
Quantum nanoelectronics
Lithographically controlled
Individual components
Correlating measurements
description New approaches such as selective area growth (SAG), where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of 256 individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility.
publishDate 2024
dc.date.none.fl_str_mv 2024
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/dataset
http://purl.org/coar/resource_type/c_ddb1
format dataset
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/384536
url http://hdl.handle.net/10261/384536
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Olšteins, Dāgs; Nagda, Gunjan; Carrad, Damon J.; Beznasyuk, Daria V.; Petersen, Christian Emanuel N.; Martí-Sànchez, Sara; Arbiol, Jordi; Jespersen, Thomas Sand. Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices. https://doi.org/10.1021/acs.nanolett.4c01038. http://hdl.handle.net/10261/381260
https://doi.org/10.1021/acs.nanolett.4c01038.s001
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Chemical Society
Figshare
publisher.none.fl_str_mv American Chemical Society
Figshare
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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