Supplementary Information: Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
New approaches such as selective area growth (SAG), where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility betwee...
| Autores: | , , , , , , , |
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| Tipo de recurso: | conjunto de datos |
| Fecha de publicación: | 2024 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/384536 |
| Acceso en línea: | http://hdl.handle.net/10261/384536 |
| Access Level: | acceso abierto |
| Palabra clave: | Transmission electron microscopy Surface impurity scattering Cryogenic electrical properties Sselective area growth Grown semiconductor nanomaterials Quantifying statistical metrics Fixed structural properties Sag nanomaterials Crystal growth Statistical distributions Structural parameters Statistical reproducibility Scale classical Sag Results confirm Quantum nanoelectronics Lithographically controlled Individual components Correlating measurements |
| Sumario: | New approaches such as selective area growth (SAG), where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of 256 individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility. |
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