Boron-incorporating silicon nanocrystals embedded in SiO2: absende of free carriers vs. B-induced defects

Boron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) should quench the photoluminescence of Si nanocrystals via non-radiative Auger rec...

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Autores: Hiller, Daniel, López Vidrier, Julià, Gutsch, Sebastian, Zacharias, Margit, Wahl, Michael, Bock, Wolfgang, Brodyanski, Alexander, Kopnarski, Michael, Nomoto, Keita, Valenta, Jan, König, Dirk
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2017
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/125969
Acceso en línea:https://hdl.handle.net/2445/125969
Access Level:acceso abierto
Palabra clave:Bor
Nanocristalls
Silici
Boron
Nanocrystals
Silicon
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spelling Boron-incorporating silicon nanocrystals embedded in SiO2: absende of free carriers vs. B-induced defectsHiller, DanielLópez Vidrier, JuliàGutsch, SebastianZacharias, MargitWahl, MichaelBock, WolfgangBrodyanski, AlexanderKopnarski, MichaelNomoto, KeitaValenta, JanKönig, DirkBorNanocristallsSiliciBoronNanocrystalsSiliconBoron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) should quench the photoluminescence of Si nanocrystals via non-radiative Auger recombination. In addition, the holes should allow for a non-transient electrical current. However, on the bottom end of the nanoscale, both substitutional incorporation and ionization are subject to significant increase in their respective energies due to confinement and size effects. Nevertheless, successful B-doping of Si nanocrystals was reported for certain structural conditions. Here, we investigate B-doping for small, well-dispersed Si nanocrystals with low and moderate B-concentrations. While small amounts of B-atoms are incorporated into these nanocrystals, they hardly affect their optical or electrical properties. If the B-concentration exceeds ~1 at%, the luminescence quantum yield is significantly quenched, whereas electrical measurements do not reveal free carriers. This observation suggests a photoluminescence quenching mechanism based on B-induced defect states. By means of density functional theory calculations, we prove that B creates multiple states in the bandgap of Si and SiO2. We conclude that non-percolated ultra-small Si nanocrystals cannot be efficiently B-doped.Nature Publishing Group2017info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/2445/125969Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésReproducció del document publicat a: https://doi.org/10.1038/s41598-017-08814-0Scientific Reports, 2017, vol. 7, p. 8337https://doi.org/10.1038/s41598-017-08814-0cc-by (c) Hiller, D. et al., 2017http://creativecommons.org/licenses/by/3.0/esinfo:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/1259692026-05-27T06:46:51Z
dc.title.none.fl_str_mv Boron-incorporating silicon nanocrystals embedded in SiO2: absende of free carriers vs. B-induced defects
title Boron-incorporating silicon nanocrystals embedded in SiO2: absende of free carriers vs. B-induced defects
spellingShingle Boron-incorporating silicon nanocrystals embedded in SiO2: absende of free carriers vs. B-induced defects
Hiller, Daniel
Bor
Nanocristalls
Silici
Boron
Nanocrystals
Silicon
title_short Boron-incorporating silicon nanocrystals embedded in SiO2: absende of free carriers vs. B-induced defects
title_full Boron-incorporating silicon nanocrystals embedded in SiO2: absende of free carriers vs. B-induced defects
title_fullStr Boron-incorporating silicon nanocrystals embedded in SiO2: absende of free carriers vs. B-induced defects
title_full_unstemmed Boron-incorporating silicon nanocrystals embedded in SiO2: absende of free carriers vs. B-induced defects
title_sort Boron-incorporating silicon nanocrystals embedded in SiO2: absende of free carriers vs. B-induced defects
dc.creator.none.fl_str_mv Hiller, Daniel
López Vidrier, Julià
Gutsch, Sebastian
Zacharias, Margit
Wahl, Michael
Bock, Wolfgang
Brodyanski, Alexander
Kopnarski, Michael
Nomoto, Keita
Valenta, Jan
König, Dirk
author Hiller, Daniel
author_facet Hiller, Daniel
López Vidrier, Julià
Gutsch, Sebastian
Zacharias, Margit
Wahl, Michael
Bock, Wolfgang
Brodyanski, Alexander
Kopnarski, Michael
Nomoto, Keita
Valenta, Jan
König, Dirk
author_role author
author2 López Vidrier, Julià
Gutsch, Sebastian
Zacharias, Margit
Wahl, Michael
Bock, Wolfgang
Brodyanski, Alexander
Kopnarski, Michael
Nomoto, Keita
Valenta, Jan
König, Dirk
author2_role author
author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Bor
Nanocristalls
Silici
Boron
Nanocrystals
Silicon
topic Bor
Nanocristalls
Silici
Boron
Nanocrystals
Silicon
description Boron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) should quench the photoluminescence of Si nanocrystals via non-radiative Auger recombination. In addition, the holes should allow for a non-transient electrical current. However, on the bottom end of the nanoscale, both substitutional incorporation and ionization are subject to significant increase in their respective energies due to confinement and size effects. Nevertheless, successful B-doping of Si nanocrystals was reported for certain structural conditions. Here, we investigate B-doping for small, well-dispersed Si nanocrystals with low and moderate B-concentrations. While small amounts of B-atoms are incorporated into these nanocrystals, they hardly affect their optical or electrical properties. If the B-concentration exceeds ~1 at%, the luminescence quantum yield is significantly quenched, whereas electrical measurements do not reveal free carriers. This observation suggests a photoluminescence quenching mechanism based on B-induced defect states. By means of density functional theory calculations, we prove that B creates multiple states in the bandgap of Si and SiO2. We conclude that non-percolated ultra-small Si nanocrystals cannot be efficiently B-doped.
publishDate 2017
dc.date.none.fl_str_mv 2017
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/125969
url https://hdl.handle.net/2445/125969
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: https://doi.org/10.1038/s41598-017-08814-0
Scientific Reports, 2017, vol. 7, p. 8337
https://doi.org/10.1038/s41598-017-08814-0
dc.rights.none.fl_str_mv cc-by (c) Hiller, D. et al., 2017
http://creativecommons.org/licenses/by/3.0/es
info:eu-repo/semantics/openAccess
rights_invalid_str_mv cc-by (c) Hiller, D. et al., 2017
http://creativecommons.org/licenses/by/3.0/es
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Nature Publishing Group
publisher.none.fl_str_mv Nature Publishing Group
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300724

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