Effect of Si3N4-mediated inversion layer on the electroluminescence properties of silicon nanocrystal superlattices
The achievement of an efficient all-Si electrically-pumped light emitter is a major milestone in present optoelectronics still to be fulfilled. Silicon nanocrystals (Si NCs) are an attractive material which, by means of the quantum confinement effect, allow attaining engineered bandgap visible emiss...
| Autores: | , , , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2018 |
| País: | España |
| Institución: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repositorio: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:2445/188715 |
| Acceso en línea: | https://hdl.handle.net/2445/188715 |
| Access Level: | acceso abierto |
| Palabra clave: | Silici Nanocristalls Luminescència Silicon Nanocrystals Luminescence |
| Sumario: | The achievement of an efficient all-Si electrically-pumped light emitter is a major milestone in present optoelectronics still to be fulfilled. Silicon nanocrystals (Si NCs) are an attractive material which, by means of the quantum confinement effect, allow attaining engineered bandgap visible emission from Si by controlling the NC size. In this work, SiO2-embedded Si NCs are employed as an active layer within a light-emitting device structure. It is demonstrated that the use of an additional thin Si3N4 interlayer within the metal-insulator-semiconductor device design induces an enhanced minority carrier injection from the substrate, which in turn increases the efficiency of sequential carrier injection under pulsed electrical excitation. This results in a substantial increase in the electroluminescence efficiency of the device. Here, the effect of this Si3N4 interlayer on the structural, optical, electrical, and electro-optical properties of a Si NC-based light emitter is reported, and the physics underlying these results is discussed. |
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