The effect of sol–gel preparation conditions on structural characteristics and magnetic properties of M-type barium hexaferrite thin films
© 2015, Springer Science+Business Media New York. Abstract: We have shown the possibility to obtain M-type barium hexaferrite thin films with thickness of ~200–450 nm on the surface of dielectric α-Al<inf>2</inf>O<inf>3</inf> substrates with low microwave dielectric loss (tan...
| Autores: | , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2015 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/124294 |
| Acceso en línea: | http://hdl.handle.net/10261/124294 |
| Access Level: | acceso abierto |
| Palabra clave: | c-Axis textured film Synthesis Surface microstructure Magnetic characteristics Non-crystalline thin films Barium hexaferrite Sol–gel |
| Sumario: | © 2015, Springer Science+Business Media New York. Abstract: We have shown the possibility to obtain M-type barium hexaferrite thin films with thickness of ~200–450 nm on the surface of dielectric α-Al<inf>2</inf>O<inf>3</inf> substrates with low microwave dielectric loss (tan δ ~ 10<sup>−4</sup> GHz) by a sol–gel method. For the production of high-dense homogeneous thin films of M-type barium hexaferrite (BaFe<inf>12</inf>O<inf>19</inf>, BHF) with nanorod-like grains and a uniform distribution of iron and barium ions, we have studied the synthesis conditions for thermally stable film-forming solutions with high concentrations of barium ions. Films with a c-axis magnetic texture were obtained by spin-coating the former solutions on α-Al<inf>2</inf>O<inf>3</inf> substrates and annealing at temperatures between 473 and 1073 K. The resulting textured M-type BHF films have demonstrated the following magnetic parameters: H<inf>c⊥</inf> = 334 kA/m, H<inf>c||</inf> = 167 kA/m; M<inf>s⊥</inf> = 0.005 emu, M<inf>s||</inf> = 0.003 emu for the films’ thickness of ~200 nm, and H<inf>c⊥</inf> = 360 kA/m, H<inf>c||</inf> = 338 kA/m; M<inf>s⊥</inf> = 0.009 emu, M<inf>s||</inf> = 0.007 emu for the films’ thickness of ~450 nm. These M-type BHF thin films can serve as a promising basis for further development of multilayer microwave resonant elements. Graphical Abstract: [Figure not available: see fulltext.] |
|---|