Light absorption properties of mesoporous barium hexaferrite, BaFe12O19

Light absorption properties are one of the most important characteristics of semiconductor materials, since it is related to particle size, electric resistance, powder density, and dielectric constant. Barium hex- aferrite (BaFe12O19) particles were synthesized by ceramic and chemical co-precipitati...

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Detalles Bibliográficos
Autores: Bañuelos Frías, Alan, Martinez Guajardo, Gerardo, Alvarado Perea, Leo, Canizalez Dávalos, Lázaro, Ruiz, Facundo, Valero Luna, Claudia
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2019
País:México
Institución:Universidad Autónoma de Zacatecas
Repositorio:Repositorio Institucional Caxcán
Idioma:inglés
OAI Identifier:oai:http://ricaxcan.uaz.edu.mx:20.500.11845/1656
Acceso en línea:http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/1656
Access Level:acceso abierto
Palabra clave:INGENIERIA Y TECNOLOGIA [7]
Band gap
Barium hexaferrite
Kubelka–Munk Method
Descripción
Sumario:Light absorption properties are one of the most important characteristics of semiconductor materials, since it is related to particle size, electric resistance, powder density, and dielectric constant. Barium hex- aferrite (BaFe12O19) particles were synthesized by ceramic and chemical co-precipitation method. Light absorption properties were studied in relation to the particle size, morphology, and surface porosity. The band gap was calculated by the Kubelka-Munk method from the obtained experimental absorption spectrum. Band gap energies of 1.82 and 1.86 eV were estimated for the particles synthesized by the cera- mic method and for the co-precipitation method respectively. The results show that both synthesized BaFe12O19 samples can be effectively excited with visible light irradiation. In addition to this, due to its other good characteristics such as its magnetic properties, high resistance to corrosion, and chemical sta- bility, make the barium hexaferrite an excellent material for diverse technological applications.