Dynamics of ultrafast phase changes in amorphous GeSb films

Time resolved imaging has been used to analyze structural transformations induced by intense 100 fs laser pulses in amorphous GeSb films. Above a threshold of 19 mJ/cm2 the data show the formation of a transient nonequilibrium state of the excited material within 300 fs. The results are consistent w...

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Detalles Bibliográficos
Autores: Sokolowski Tinten, K., Solís Céspedes, Javier, Bialkowski, J., Siegel, Jan, Afonso, Carmen N., Von Der Linde, D.
Tipo de recurso: artículo
Fecha de publicación:1998
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/54232
Acceso en línea:http://hdl.handle.net/10261/54232
Access Level:acceso abierto
Descripción
Sumario:Time resolved imaging has been used to analyze structural transformations induced by intense 100 fs laser pulses in amorphous GeSb films. Above a threshold of 19 mJ/cm2 the data show the formation of a transient nonequilibrium state of the excited material within 300 fs. The results are consistent with an electronically induced, amorphous-to-crystalline phase transition.