Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys

The effects of ex situ annealing in N ambient and in situ annealing in As ambient on GaNSbAs/GaAs structures grown by molecular beam epitaxy were investigated by low temperature cross-sectional cathodoluminescence (CL). The amount and distribution of Sb was measured by energy dispersive spectroscopy...

ver descrição completa

Detalhes bibliográficos
Autores: Navarro, A., Martínez Sacristán, Óscar, Galiana, Beatriz, Lombardero, I., Ochoa, M., García, I., Gabás, M., Ballesteros, Carmen, Jiménez López, Juan Ignacio, Algora, C.
Tipo de documento: capítulo de livro
Data de publicação:2018
País:España
Recursos:Universidad de Valladolid
Repositório:UVaDOC. Repositorio Documental de la Universidad de Valladolid
OAI Identifier:oai:uvadoc.uva.es:10324/31326
Acesso em linha:https://doi.org/10.1007/s11664-018-6325-3
http://uvadoc.uva.es/handle/10324/31326
Access Level:Acceso aberto
Palavra-chave:Dilute nitrides, GaNSbAs, solar cells, cathodoluminescence, annealing
id ES_74cdbfb68f49dc5ef6cf0840b4050fa6
oai_identifier_str oai:uvadoc.uva.es:10324/31326
network_acronym_str ES
network_name_str España
repository_id_str
spelling Cathodoluminescence Characterization of Dilute Nitride GaNSbAs AlloysNavarro, A.Martínez Sacristán, ÓscarGaliana, BeatrizLombardero, I.Ochoa, M.García, I.Gabás, M.Ballesteros, CarmenJiménez López, Juan IgnacioAlgora, C.Dilute nitrides, GaNSbAs, solar cells, cathodoluminescence, annealingThe effects of ex situ annealing in N ambient and in situ annealing in As ambient on GaNSbAs/GaAs structures grown by molecular beam epitaxy were investigated by low temperature cross-sectional cathodoluminescence (CL). The amount and distribution of Sb was measured by energy dispersive spectroscopy (EDS). The cross-sectional CL analysis of all samples reveals a shift of the near band edge (NBE) emission along the growth axis, presumably associated with a non-uniform incorporation of Sb during the growth process, in agreement with the Sb distribution measured by EDS in the as-grown sample. The NBE emission in the annealed samples presents a redshift with respect to the as-grown sample. This effect might be explained by a redistribution/activation of N in the GaNSbAs lattice since the Sb distribution measured by EDS does not reveal significant changes, within the error margin, with respect to the as-grown sample. The in situ annealed in the As overpressure sample shows the best properties for solar cells applications, i.e., a NBE peak position close to 1.0 eV and the lowest full width at half maximum of this emission.Spanish Government (MINECO Project ENE2014- 56069-C4-4-R) and Junta de Castilla y Leo´n (VA293U13 and VA081U16 Projects). The Ministry of Economy and Competitiveness MINECO supports this work through Projects TEC2014-54260- C3-1-P, TEC2014-54260-C3-2-P, TEC2014-54260- C3-3-P, PCIN-2015-181-C02-01 and PCIN-2015- 181-C02-02.Springer2018info:eu-repo/semantics/bookPartapplication/pdfhttps://doi.org/10.1007/s11664-018-6325-3http://uvadoc.uva.es/handle/10324/31326reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolidinstname:Universidad de ValladolidInglésTopical Collection: 17th Conference on Defects (DRIP XVII)https://link.springer.com/article/10.1007/s11664-018-6325-3info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0/oai:uvadoc.uva.es:10324/313262026-06-13T12:44:47Z
dc.title.none.fl_str_mv Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys
title Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys
spellingShingle Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys
Navarro, A.
Dilute nitrides, GaNSbAs, solar cells, cathodoluminescence, annealing
title_short Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys
title_full Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys
title_fullStr Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys
title_full_unstemmed Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys
title_sort Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys
dc.creator.none.fl_str_mv Navarro, A.
Martínez Sacristán, Óscar
Galiana, Beatriz
Lombardero, I.
Ochoa, M.
García, I.
Gabás, M.
Ballesteros, Carmen
Jiménez López, Juan Ignacio
Algora, C.
author Navarro, A.
author_facet Navarro, A.
Martínez Sacristán, Óscar
Galiana, Beatriz
Lombardero, I.
Ochoa, M.
García, I.
Gabás, M.
Ballesteros, Carmen
Jiménez López, Juan Ignacio
Algora, C.
author_role author
author2 Martínez Sacristán, Óscar
Galiana, Beatriz
Lombardero, I.
Ochoa, M.
García, I.
Gabás, M.
Ballesteros, Carmen
Jiménez López, Juan Ignacio
Algora, C.
author2_role author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Dilute nitrides, GaNSbAs, solar cells, cathodoluminescence, annealing
topic Dilute nitrides, GaNSbAs, solar cells, cathodoluminescence, annealing
description The effects of ex situ annealing in N ambient and in situ annealing in As ambient on GaNSbAs/GaAs structures grown by molecular beam epitaxy were investigated by low temperature cross-sectional cathodoluminescence (CL). The amount and distribution of Sb was measured by energy dispersive spectroscopy (EDS). The cross-sectional CL analysis of all samples reveals a shift of the near band edge (NBE) emission along the growth axis, presumably associated with a non-uniform incorporation of Sb during the growth process, in agreement with the Sb distribution measured by EDS in the as-grown sample. The NBE emission in the annealed samples presents a redshift with respect to the as-grown sample. This effect might be explained by a redistribution/activation of N in the GaNSbAs lattice since the Sb distribution measured by EDS does not reveal significant changes, within the error margin, with respect to the as-grown sample. The in situ annealed in the As overpressure sample shows the best properties for solar cells applications, i.e., a NBE peak position close to 1.0 eV and the lowest full width at half maximum of this emission.
publishDate 2018
dc.date.none.fl_str_mv 2018
dc.type.none.fl_str_mv info:eu-repo/semantics/bookPart
format bookPart
dc.identifier.none.fl_str_mv https://doi.org/10.1007/s11664-018-6325-3
http://uvadoc.uva.es/handle/10324/31326
url https://doi.org/10.1007/s11664-018-6325-3
http://uvadoc.uva.es/handle/10324/31326
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Topical Collection: 17th Conference on Defects (DRIP XVII)
https://link.springer.com/article/10.1007/s11664-018-6325-3
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Springer
publisher.none.fl_str_mv Springer
dc.source.none.fl_str_mv reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname:Universidad de Valladolid
instname_str Universidad de Valladolid
reponame_str UVaDOC. Repositorio Documental de la Universidad de Valladolid
collection UVaDOC. Repositorio Documental de la Universidad de Valladolid
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869410934334685184
score 15,301603

Registros relacionados