Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability

Martin Martinez, Javier|||0000-0001-5938-5898; Diaz-Fortuny, Javier|||0000-0002-8186-071X; Saraza-Canflanca, Pablo|||0000-0003-2155-8305; Rodríguez Martínez, Rosana|||0000-0002-4565-6703; Castro-Lopez, Rafael|||0000-0002-6247-3124; Roca, Elisenda|||0000-0001-6260-6495; Fernandez, Francisco V.|||0000-0001-8682-2280; Nafria, Montserrat|||0000-0002-9549-2890

Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability

Time-Dependent Variability (TDV) phenomena represent a serious concern for device and circuit reliability. To address the TDV impact at circuit level, Reliability-Aware Design (RAD) tools can be used by circuit designers to achieve more reliable circuits. However, this is not a straightforward task,...

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Detalles Bibliográficos
Autores:	Martin Martinez, Javier\|\|\|0000-0001-5938-5898, Diaz-Fortuny, Javier\|\|\|0000-0002-8186-071X, Saraza-Canflanca, Pablo\|\|\|0000-0003-2155-8305, Rodríguez Martínez, Rosana\|\|\|0000-0002-4565-6703, Castro-Lopez, Rafael\|\|\|0000-0002-6247-3124, Roca, Elisenda\|\|\|0000-0001-6260-6495, Fernandez, Francisco V.\|\|\|0000-0001-8682-2280, Nafria, Montserrat\|\|\|0000-0002-9549-2890
Tipo de recurso:	capítulo de libro
Fecha de publicación:	2023
País:	España
Institución:	Universitat Autònoma de Barcelona
Repositorio:	Dipòsit Digital de Documents de la UAB
Idioma:	inglés
OAI Identifier:	oai:ddd.uab.cat:291214
Acceso en línea:	https://ddd.uab.cat/record/291214 https://dx.doi.org/urn:doi:10.1109/irps48203.2023.10118334
Access Level:	acceso abierto
Palabra clave:	Aging Array Bias Temperature Instability (BTI) Characterization CMOS Degradation Hot Carrier Injection (HCI) Random Telegraph Noise (RTN) Reliability Reliability-Aware Design (RAD) Variability

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spelling	Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variabilityMartin Martinez, Javier\|\|\|0000-0001-5938-5898Diaz-Fortuny, Javier\|\|\|0000-0002-8186-071XSaraza-Canflanca, Pablo\|\|\|0000-0003-2155-8305Rodríguez Martínez, Rosana\|\|\|0000-0002-4565-6703Castro-Lopez, Rafael\|\|\|0000-0002-6247-3124Roca, Elisenda\|\|\|0000-0001-6260-6495Fernandez, Francisco V.\|\|\|0000-0001-8682-2280Nafria, Montserrat\|\|\|0000-0002-9549-2890AgingArrayBias Temperature Instability (BTI)CharacterizationCMOSDegradationHot Carrier Injection (HCI)Random Telegraph Noise (RTN)ReliabilityReliability-Aware Design (RAD)VariabilityTime-Dependent Variability (TDV) phenomena represent a serious concern for device and circuit reliability. To address the TDV impact at circuit level, Reliability-Aware Design (RAD) tools can be used by circuit designers to achieve more reliable circuits. However, this is not a straightforward task, since the development of RAD tools comprises several steps such as the characterization, modeling and simulation of TDV phenomena. Furthermore, in deeply-scaled CMOS technologies, TDV reveals a stochastic nature that can complicate those steps. In this invited paper, we review some of the main challenges that appear in each step of the flow towards the development of RAD tools, providing our solutions to them.Institute of Electrical and Electronics Engineers Inc. 22023-01-0120232023-01-01Capítol de llibrehttp://purl.org/coar/resource_type/c_3248AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/bookPartapplication/pdfhttps://ddd.uab.cat/record/291214https://dx.doi.org/urn:doi:10.1109/irps48203.2023.10118334reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengAgencia Estatal de Investigación https://doi.org/10.13039/501100011033 PID2019-103869RB-C32Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 PID2019-103869RB-C31open accesshttp://purl.org/coar/access_right/c_abf2Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.https://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2912142026-06-06T12:50:31Z
dc.title.none.fl_str_mv	Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability
title	Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability
spellingShingle	Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability Martin Martinez, Javier\|\|\|0000-0001-5938-5898 Aging Array Bias Temperature Instability (BTI) Characterization CMOS Degradation Hot Carrier Injection (HCI) Random Telegraph Noise (RTN) Reliability Reliability-Aware Design (RAD) Variability
title_short	Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability
title_full	Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability
title_fullStr	Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability
title_full_unstemmed	Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability
title_sort	Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability
dc.creator.none.fl_str_mv	Martin Martinez, Javier\|\|\|0000-0001-5938-5898 Diaz-Fortuny, Javier\|\|\|0000-0002-8186-071X Saraza-Canflanca, Pablo\|\|\|0000-0003-2155-8305 Rodríguez Martínez, Rosana\|\|\|0000-0002-4565-6703 Castro-Lopez, Rafael\|\|\|0000-0002-6247-3124 Roca, Elisenda\|\|\|0000-0001-6260-6495 Fernandez, Francisco V.\|\|\|0000-0001-8682-2280 Nafria, Montserrat\|\|\|0000-0002-9549-2890
author	Martin Martinez, Javier\|\|\|0000-0001-5938-5898
author_facet	Martin Martinez, Javier\|\|\|0000-0001-5938-5898 Diaz-Fortuny, Javier\|\|\|0000-0002-8186-071X Saraza-Canflanca, Pablo\|\|\|0000-0003-2155-8305 Rodríguez Martínez, Rosana\|\|\|0000-0002-4565-6703 Castro-Lopez, Rafael\|\|\|0000-0002-6247-3124 Roca, Elisenda\|\|\|0000-0001-6260-6495 Fernandez, Francisco V.\|\|\|0000-0001-8682-2280 Nafria, Montserrat\|\|\|0000-0002-9549-2890
author_role	author
author2	Diaz-Fortuny, Javier\|\|\|0000-0002-8186-071X Saraza-Canflanca, Pablo\|\|\|0000-0003-2155-8305 Rodríguez Martínez, Rosana\|\|\|0000-0002-4565-6703 Castro-Lopez, Rafael\|\|\|0000-0002-6247-3124 Roca, Elisenda\|\|\|0000-0001-6260-6495 Fernandez, Francisco V.\|\|\|0000-0001-8682-2280 Nafria, Montserrat\|\|\|0000-0002-9549-2890
author2_role	author author author author author author author
dc.subject.none.fl_str_mv	Aging Array Bias Temperature Instability (BTI) Characterization CMOS Degradation Hot Carrier Injection (HCI) Random Telegraph Noise (RTN) Reliability Reliability-Aware Design (RAD) Variability
topic	Aging Array Bias Temperature Instability (BTI) Characterization CMOS Degradation Hot Carrier Injection (HCI) Random Telegraph Noise (RTN) Reliability Reliability-Aware Design (RAD) Variability
description	Time-Dependent Variability (TDV) phenomena represent a serious concern for device and circuit reliability. To address the TDV impact at circuit level, Reliability-Aware Design (RAD) tools can be used by circuit designers to achieve more reliable circuits. However, this is not a straightforward task, since the development of RAD tools comprises several steps such as the characterization, modeling and simulation of TDV phenomena. Furthermore, in deeply-scaled CMOS technologies, TDV reveals a stochastic nature that can complicate those steps. In this invited paper, we review some of the main challenges that appear in each step of the flow towards the development of RAD tools, providing our solutions to them.
publishDate	2023
dc.date.none.fl_str_mv	2 2023-01-01 2023 2023-01-01
dc.type.none.fl_str_mv	Capítol de llibre http://purl.org/coar/resource_type/c_3248 AM http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv	info:eu-repo/semantics/bookPart
format	bookPart
dc.identifier.none.fl_str_mv	https://ddd.uab.cat/record/291214 https://dx.doi.org/urn:doi:10.1109/irps48203.2023.10118334
url	https://ddd.uab.cat/record/291214 https://dx.doi.org/urn:doi:10.1109/irps48203.2023.10118334
dc.language.none.fl_str_mv	Inglés eng
language_invalid_str_mv	Inglés
language	eng
dc.relation.none.fl_str_mv	Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 PID2019-103869RB-C32 Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 PID2019-103869RB-C31
dc.rights.none.fl_str_mv	open access http://purl.org/coar/access_right/c_abf2 https://rightsstatements.org/vocab/InC/1.0/
dc.rights.openaire.fl_str_mv	info:eu-repo/semantics/openAccess
rights_invalid_str_mv	open access http://purl.org/coar/access_right/c_abf2 https://rightsstatements.org/vocab/InC/1.0/
eu_rights_str_mv	openAccess
dc.format.none.fl_str_mv	application/pdf
dc.publisher.none.fl_str_mv	Institute of Electrical and Electronics Engineers Inc.
publisher.none.fl_str_mv	Institute of Electrical and Electronics Engineers Inc.
dc.source.none.fl_str_mv	reponame:Dipòsit Digital de Documents de la UAB instname:Universitat Autònoma de Barcelona
instname_str	Universitat Autònoma de Barcelona
reponame_str	Dipòsit Digital de Documents de la UAB
collection	Dipòsit Digital de Documents de la UAB
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Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability

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