Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability
Time-Dependent Variability (TDV) phenomena represent a serious concern for device and circuit reliability. To address the TDV impact at circuit level, Reliability-Aware Design (RAD) tools can be used by circuit designers to achieve more reliable circuits. However, this is not a straightforward task,...
| Autores: | , , , , , , , |
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| Tipo de recurso: | capítulo de libro |
| Fecha de publicación: | 2023 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:291214 |
| Acceso en línea: | https://ddd.uab.cat/record/291214 https://dx.doi.org/urn:doi:10.1109/irps48203.2023.10118334 |
| Access Level: | acceso abierto |
| Palabra clave: | Aging Array Bias Temperature Instability (BTI) Characterization CMOS Degradation Hot Carrier Injection (HCI) Random Telegraph Noise (RTN) Reliability Reliability-Aware Design (RAD) Variability |
| Sumario: | Time-Dependent Variability (TDV) phenomena represent a serious concern for device and circuit reliability. To address the TDV impact at circuit level, Reliability-Aware Design (RAD) tools can be used by circuit designers to achieve more reliable circuits. However, this is not a straightforward task, since the development of RAD tools comprises several steps such as the characterization, modeling and simulation of TDV phenomena. Furthermore, in deeply-scaled CMOS technologies, TDV reveals a stochastic nature that can complicate those steps. In this invited paper, we review some of the main challenges that appear in each step of the flow towards the development of RAD tools, providing our solutions to them. |
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