Growth of GaP1-x-yAsyNx on Si substrates by chemical beam epitaxy

The following article appeared in Journal of Applied Physics 126.10 (2019): 105704 and may be found at https://aip.scitation.org/doi/full/10.1063/1.5111090

Detalhes bibliográficos
Autores: Ben Saddik, K., Braña de Cal, Alejandro Francisco, López, N., Walukiewicz, W., García Carretero, Basilio Javier
Formato: artículo
Fecha de publicación:2019
País:España
Recursos:Universidad Autónoma de Madrid
Repositorio:Biblos-e Archivo. Repositorio Institucional de la UAM
Idioma:inglés
OAI Identifier:oai:repositorio.uam.es:10486/706128
Acesso em linha:http://hdl.handle.net/10486/706128
https://dx.doi.org/10.1063/1.5111090
Access Level:acceso abierto
Palavra-chave:III-V Semiconductors
Gallium Arsenides
Semiconductor Quantum Wells
Física
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spelling Growth of GaP1-x-yAsyNx on Si substrates by chemical beam epitaxyBen Saddik, K.Braña de Cal, Alejandro FranciscoLópez, N.Walukiewicz, W.García Carretero, Basilio JavierIII-V SemiconductorsGallium ArsenidesSemiconductor Quantum WellsFísicaThe following article appeared in Journal of Applied Physics 126.10 (2019): 105704 and may be found at https://aip.scitation.org/doi/full/10.1063/1.5111090Chemical beam epitaxy has been used to grow layers of GaP1-xNx, GaP1-yAsy, and nearly lattice-matched layers GaP1-x-yAsyNx on Si substrates. To address the issue of antiphase domain generation associated with the growth of polar semiconductors on Si, misoriented Si(001) substrates have been used combined with a carefully designed GaP buffer layer growth. The reflection high-energy electron diffraction pattern exhibits a (2 × 4) surface reconstruction after GaP buffer layer and GaP(As,N) graded layer growth, indicating the good surface quality and planarity of the grown layers. Sample composition was obtained by simultaneous acquisition of Rutherford backscattering spectrometry and nuclear reaction analysis, indicating a linear dependence of N and As mole fractions on the flux of their respective precursor. GaP1-x-yAsyNx layers grown on Si substrates have a lattice mismatch not larger than ±0.005 for N contents in the range 0.02 < x < 0.05. High-resolution X-ray diffraction reciprocal space maps demonstrate a good crystalline quality. Intense photoluminescence spectra have been measured in all GaP1-xNx and GaP1-x-yAsyNx layers, as it is expected for direct bandgap materials. Two wide overlapped emission peaks are observed in all the spectra, most likely related to near bandgap recombination. The position of the higher energy peak for GaP1-xNx and GaP1-x-yAsyNx layers has been compared to bandgap energy calculations using the band anticrossing model, showing good agreementAmerican Institute of PhysicsDepartamento de Física AplicadaFacultad de Ciencias20192019-09-10research articlehttp://purl.org/coar/resource_type/c_2df8fbb1VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10486/706128https://dx.doi.org/10.1063/1.5111090reponame:Biblos-e Archivo. Repositorio Institucional de la UAMinstname:Universidad Autónoma de MadridInglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:repositorio.uam.es:10486/7061282026-06-23T12:46:27Z
dc.title.none.fl_str_mv Growth of GaP1-x-yAsyNx on Si substrates by chemical beam epitaxy
title Growth of GaP1-x-yAsyNx on Si substrates by chemical beam epitaxy
spellingShingle Growth of GaP1-x-yAsyNx on Si substrates by chemical beam epitaxy
Ben Saddik, K.
III-V Semiconductors
Gallium Arsenides
Semiconductor Quantum Wells
Física
title_short Growth of GaP1-x-yAsyNx on Si substrates by chemical beam epitaxy
title_full Growth of GaP1-x-yAsyNx on Si substrates by chemical beam epitaxy
title_fullStr Growth of GaP1-x-yAsyNx on Si substrates by chemical beam epitaxy
title_full_unstemmed Growth of GaP1-x-yAsyNx on Si substrates by chemical beam epitaxy
title_sort Growth of GaP1-x-yAsyNx on Si substrates by chemical beam epitaxy
dc.creator.none.fl_str_mv Ben Saddik, K.
Braña de Cal, Alejandro Francisco
López, N.
Walukiewicz, W.
García Carretero, Basilio Javier
author Ben Saddik, K.
author_facet Ben Saddik, K.
Braña de Cal, Alejandro Francisco
López, N.
Walukiewicz, W.
García Carretero, Basilio Javier
author_role author
author2 Braña de Cal, Alejandro Francisco
López, N.
Walukiewicz, W.
García Carretero, Basilio Javier
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Departamento de Física Aplicada
Facultad de Ciencias
dc.subject.none.fl_str_mv III-V Semiconductors
Gallium Arsenides
Semiconductor Quantum Wells
Física
topic III-V Semiconductors
Gallium Arsenides
Semiconductor Quantum Wells
Física
description The following article appeared in Journal of Applied Physics 126.10 (2019): 105704 and may be found at https://aip.scitation.org/doi/full/10.1063/1.5111090
publishDate 2019
dc.date.none.fl_str_mv 2019
2019-09-10
dc.type.none.fl_str_mv research article
http://purl.org/coar/resource_type/c_2df8fbb1
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10486/706128
https://dx.doi.org/10.1063/1.5111090
url http://hdl.handle.net/10486/706128
https://dx.doi.org/10.1063/1.5111090
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Biblos-e Archivo. Repositorio Institucional de la UAM
instname:Universidad Autónoma de Madrid
instname_str Universidad Autónoma de Madrid
reponame_str Biblos-e Archivo. Repositorio Institucional de la UAM
collection Biblos-e Archivo. Repositorio Institucional de la UAM
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,198674

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